TY - JOUR
T1 - Polymer dielectric layer functionality in organic field-effect transistor based ammonia gas sensor
AU - Huang, Wei
AU - Yu, Junsheng
AU - Yu, Xinge
AU - Shi, Wei
N1 - Funding Information:
This research was funded by the National Science Foundation of China (NSFC) (Grant No. 61177032 ), the Foundation for Innovation Groups of National Science Foundation of China via No. 61021061 , the Fundamental Research Funds for the Central Universities (Grant No. ZYGX2010Z004 ), SRF for ROCS, SEM (Grant No. GGRYJJ08-05 ).
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - Ammonia (NH3) gas sensors based on pentacene organic field-effect transistors (OFETs) are fabricated using polymers as the dielectric. Compared with those incorporating poly(vinyl alcohol), poly(4-vinylphenol) or poly(methyl methacrylate) dielectric, a low detect limitation of 1 ppm and enhanced recovery property are obtained for OFETs with polystyrene (PS) as gate dielectric. By analyzing the morphologies of pentacene and electrical characteristics of the OFETs under various concentrations of NH3, the variations of the sensing properties of different dielectrics based OFET-sensors are proved to be mainly caused by the diversities of dielectric/pentacene interfacial properties. Furthermore, low surface trap density and the absence of polar groups in PS dielectric are ascribed to be responsible for the high performance of NH3 sensors.
AB - Ammonia (NH3) gas sensors based on pentacene organic field-effect transistors (OFETs) are fabricated using polymers as the dielectric. Compared with those incorporating poly(vinyl alcohol), poly(4-vinylphenol) or poly(methyl methacrylate) dielectric, a low detect limitation of 1 ppm and enhanced recovery property are obtained for OFETs with polystyrene (PS) as gate dielectric. By analyzing the morphologies of pentacene and electrical characteristics of the OFETs under various concentrations of NH3, the variations of the sensing properties of different dielectrics based OFET-sensors are proved to be mainly caused by the diversities of dielectric/pentacene interfacial properties. Furthermore, low surface trap density and the absence of polar groups in PS dielectric are ascribed to be responsible for the high performance of NH3 sensors.
KW - Ammonia sensor
KW - Low detect limitation
KW - Organic field-effect transistors (OFETs)
KW - Polymer dielectric
KW - Recovery property
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U2 - 10.1016/j.orgel.2013.09.018
DO - 10.1016/j.orgel.2013.09.018
M3 - Article
AN - SCOPUS:84888288124
SN - 1566-1199
VL - 14
SP - 3453
EP - 3459
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
IS - 12
ER -