TY - JOUR
T1 - Porous Semiconducting Polymers Enable High-Performance Electrochemical Transistors
AU - Huang, Lizhen
AU - Wang, Zhi
AU - Chen, Jianhua
AU - Wang, Binghao
AU - Chen, Yao
AU - Huang, Wei
AU - Chi, Lifeng
AU - Marks, Tobin J.
AU - Facchetti, Antonio
N1 - Funding Information:
The authors thank AFOSR (FA9550‐18‐1‐0320) and the Northwestern University MRSEC (NSF DMR‐1720139), and Flexterra Corp. for support of this research. This work made use of the J. B. Cohen X‐Ray Diffraction Facility; EPIC facility, Keck‐II facility, SPID facility, NUFAB of the NUANCE Center at Northwestern University, which received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF NNCI‐1542205); the MRSEC program (NSF DMR‐1121262); the International Institute for Nanotechnology (IIN); the Keck Foundation; and the State of Illinois, through the IIN. The authors also thank Dr. Joseph Strzalka of the Argonne National Laboratory Advanced Photon Source for the assistance with GIWAXS measurements. Use of the Advanced Photon Source, an Office of Science User Facility operated for the US DOE Office of Science by Argonne National Laboratory, was supported by the US DOE under Contract DE‐AC02‐06CH11357. L. Z. Huang acknowledges financial support from the Collaborative Innovation Center of Suzhou Nano Science and Technology and the NSFC funding (No. 51773143 and No. 51821002).
Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2021/4/8
Y1 - 2021/4/8
N2 - Organic polymer electrochemical transistors (OECTs) are of great interest for flexible electronics and bioelectronics applications owing to their high transconductance and low operating voltage. However, efficient OECT operation must delicately balance the seemingly incompatible materials optimizations of redox chemistry, active layer electronic transport, and ion penetration/transport. The latter characteristics are particularly challenging since most high-mobility semiconducting polymers are hydrophobic, which hinders efficient ion penetration, hence limiting OECT performance. Here, the properties and OECT response of a series of dense and porous semiconducting polymer films are compared, the latter fabricated via a facile breath figure approach. This methodology enables fast ion doping, high transconductance (up to 364 S cm−1), and a low subthreshold swing for the hydrophobic polymers DPPDTT and P3HT, rivalling or exceeding the metrics of the relatively hydrophilic polymer, Pg2T-T. Furthermore, the porous morphology also enhances the transconductance of hydrophilic polymers, offering a general strategy for fabricating high-performance electrochemical transistors.
AB - Organic polymer electrochemical transistors (OECTs) are of great interest for flexible electronics and bioelectronics applications owing to their high transconductance and low operating voltage. However, efficient OECT operation must delicately balance the seemingly incompatible materials optimizations of redox chemistry, active layer electronic transport, and ion penetration/transport. The latter characteristics are particularly challenging since most high-mobility semiconducting polymers are hydrophobic, which hinders efficient ion penetration, hence limiting OECT performance. Here, the properties and OECT response of a series of dense and porous semiconducting polymer films are compared, the latter fabricated via a facile breath figure approach. This methodology enables fast ion doping, high transconductance (up to 364 S cm−1), and a low subthreshold swing for the hydrophobic polymers DPPDTT and P3HT, rivalling or exceeding the metrics of the relatively hydrophilic polymer, Pg2T-T. Furthermore, the porous morphology also enhances the transconductance of hydrophilic polymers, offering a general strategy for fabricating high-performance electrochemical transistors.
KW - breath figure fabrication
KW - organic electrochemical transistors
KW - porous films
KW - semiconducting polymers
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U2 - 10.1002/adma.202007041
DO - 10.1002/adma.202007041
M3 - Article
C2 - 33655643
AN - SCOPUS:85101876045
SN - 0935-9648
VL - 33
JO - Advanced Materials
JF - Advanced Materials
IS - 14
M1 - 2007041
ER -