Possible manifestation of Andreev bound states in double-barrier Nb/Al/AlO(x)/Al/AlO(x)/Nb tunnel junctions

I. P. Nevirkovets*, J. B. Ketterson, S. E. Shafranjuk, S. Lomatch

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

We have experimentally investigated electron transport in double-barrier Nb/Al/AlO(x)/Al/AlO(x)/Nb devices. At low temperatures, the devices reveal a novel magnetic-field-sensitive subgap structure in the current-voltage characteristics, which is interpreted as a manifestation of Andreev bound states. A correlation between phase-coherent and nonequilibrium properties is suggested. (C) 2000 Elsevier Science B.V.

Original languageEnglish (US)
Pages (from-to)238-244
Number of pages7
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume269
Issue number4
DOIs
StatePublished - May 8 2000

Keywords

  • Andreev bound states
  • Andreev reflection
  • Josephson effect
  • Superconductivity
  • Tunneling

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Possible manifestation of Andreev bound states in double-barrier Nb/Al/AlO(x)/Al/AlO(x)/Nb tunnel junctions'. Together they form a unique fingerprint.

Cite this