Postgrowth annealing effects on heteroepitaxial MnAs thin films grown on GaAs(001) and Si(001)

J. H. Song; Y. Cui; J. J. Lee; M. Y. Kim; J. B. Ketterson

doi:10.1063/1.2170586

Postgrowth annealing effects on heteroepitaxial MnAs thin films grown on GaAs(001) and Si(001)

J. H. Song^*, Y. Cui, J. J. Lee, M. Y. Kim, J. B. Ketterson

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

We have carried out postgrowth annealing studies on heteroepitaxial MnAs thin films deposited on GaAs(001) and Si(001) by molecular-beam epitaxy. Before annealing, a paramagnetic behavior is exhibited for MnAsSi(001), whereas a ferromagnetic behavior is observed for MnAsGaAs(001). The paramagnetic Β - MnAs phase domains of the as-grown MnAsGaAs(001) sample disappear completely after postgrowth annealing. Surprisingly, after postgrowth annealing, the crystal orientation of the MnAsSi(001) film changes, and is accompanied by a shift from paramagnetic to ferromagnetic behavior. We attribute these observations to relaxation of the biaxial strain associated with the substrates.

Original language	English (US)
Article number	08D513
Journal	Journal of Applied Physics
Volume	99
Issue number	8
DOIs	https://doi.org/10.1063/1.2170586
State	Published - 2006

Funding

Research at Northwestern University was supported by the AFOSR Chalcopyrite MURI Grant No. F49620-01-1-0428, and NSF Grant Nos. ECS-0224210 and DMR 0244711; use was made of the facilities operated by the Northwestern MERSEC supported by the National Science Foundation.

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.2170586

Cite this

@article{ff51a2cee8364cda9d53ab1dbea8aaac,

title = "Postgrowth annealing effects on heteroepitaxial MnAs thin films grown on GaAs(001) and Si(001)",

abstract = "We have carried out postgrowth annealing studies on heteroepitaxial MnAs thin films deposited on GaAs(001) and Si(001) by molecular-beam epitaxy. Before annealing, a paramagnetic behavior is exhibited for MnAsSi(001), whereas a ferromagnetic behavior is observed for MnAsGaAs(001). The paramagnetic Β - MnAs phase domains of the as-grown MnAsGaAs(001) sample disappear completely after postgrowth annealing. Surprisingly, after postgrowth annealing, the crystal orientation of the MnAsSi(001) film changes, and is accompanied by a shift from paramagnetic to ferromagnetic behavior. We attribute these observations to relaxation of the biaxial strain associated with the substrates.",

author = "Song, {J. H.} and Y. Cui and Lee, {J. J.} and Kim, {M. Y.} and Ketterson, {J. B.}",

note = "Funding Information: Research at Northwestern University was supported by the AFOSR Chalcopyrite MURI Grant No. F49620-01-1-0428, and NSF Grant Nos. ECS-0224210 and DMR 0244711; use was made of the facilities operated by the Northwestern MERSEC supported by the National Science Foundation. ",

year = "2006",

doi = "10.1063/1.2170586",

language = "English (US)",

volume = "99",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Postgrowth annealing effects on heteroepitaxial MnAs thin films grown on GaAs(001) and Si(001)

AU - Song, J. H.

AU - Cui, Y.

AU - Lee, J. J.

AU - Kim, M. Y.

AU - Ketterson, J. B.

N1 - Funding Information: Research at Northwestern University was supported by the AFOSR Chalcopyrite MURI Grant No. F49620-01-1-0428, and NSF Grant Nos. ECS-0224210 and DMR 0244711; use was made of the facilities operated by the Northwestern MERSEC supported by the National Science Foundation.

PY - 2006

Y1 - 2006

N2 - We have carried out postgrowth annealing studies on heteroepitaxial MnAs thin films deposited on GaAs(001) and Si(001) by molecular-beam epitaxy. Before annealing, a paramagnetic behavior is exhibited for MnAsSi(001), whereas a ferromagnetic behavior is observed for MnAsGaAs(001). The paramagnetic Β - MnAs phase domains of the as-grown MnAsGaAs(001) sample disappear completely after postgrowth annealing. Surprisingly, after postgrowth annealing, the crystal orientation of the MnAsSi(001) film changes, and is accompanied by a shift from paramagnetic to ferromagnetic behavior. We attribute these observations to relaxation of the biaxial strain associated with the substrates.

AB - We have carried out postgrowth annealing studies on heteroepitaxial MnAs thin films deposited on GaAs(001) and Si(001) by molecular-beam epitaxy. Before annealing, a paramagnetic behavior is exhibited for MnAsSi(001), whereas a ferromagnetic behavior is observed for MnAsGaAs(001). The paramagnetic Β - MnAs phase domains of the as-grown MnAsGaAs(001) sample disappear completely after postgrowth annealing. Surprisingly, after postgrowth annealing, the crystal orientation of the MnAsSi(001) film changes, and is accompanied by a shift from paramagnetic to ferromagnetic behavior. We attribute these observations to relaxation of the biaxial strain associated with the substrates.

UR - http://www.scopus.com/inward/record.url?scp=33646717307&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646717307&partnerID=8YFLogxK

U2 - 10.1063/1.2170586

DO - 10.1063/1.2170586

M3 - Article

AN - SCOPUS:33646717307

SN - 0021-8979

VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 08D513

ER -

Postgrowth annealing effects on heteroepitaxial MnAs thin films grown on GaAs(001) and Si(001)

Abstract

Funding

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this