Postgrowth annealing effects on heteroepitaxial MnAs thin films grown on GaAs(001) and Si(001)

J. H. Song*, Y. Cui, J. J. Lee, M. Y. Kim, J. B. Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We have carried out postgrowth annealing studies on heteroepitaxial MnAs thin films deposited on GaAs(001) and Si(001) by molecular-beam epitaxy. Before annealing, a paramagnetic behavior is exhibited for MnAsSi(001), whereas a ferromagnetic behavior is observed for MnAsGaAs(001). The paramagnetic Β - MnAs phase domains of the as-grown MnAsGaAs(001) sample disappear completely after postgrowth annealing. Surprisingly, after postgrowth annealing, the crystal orientation of the MnAsSi(001) film changes, and is accompanied by a shift from paramagnetic to ferromagnetic behavior. We attribute these observations to relaxation of the biaxial strain associated with the substrates.

Original languageEnglish (US)
Article number08D513
JournalJournal of Applied Physics
Volume99
Issue number8
DOIs
StatePublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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