Precise formation of dovetail structures for inp-based devices

Iman Hassani Nia, Hooman Mohseni

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Anisotropic etching of InP along specific crystallographic directions leads to negative sidewall angles along dovetail direction. This is an important process for self-alignment of electrical contacts where sub-micron alignment is needed. However, existing etching methods are only suitable for shallow etching, and for stress-free layers. Here we demonstrate a new etching method that is capable of producing dovetail patterns with 10 times larger etch depth, and where interface stress exists.We believe this new etching method is useful for many electronic and optoelectronic devices that require precise negative angle sidewalls in their fabrication scheme.

Original languageEnglish (US)
Pages (from-to)P44-P46
JournalECS Solid State Letters
Volume2
Issue number5
DOIs
StatePublished - Jul 26 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Precise formation of dovetail structures for inp-based devices'. Together they form a unique fingerprint.

  • Cite this