Precise quantized hall resistance measurements in GaAs/Al xGa1-xAs and InxGa1-xAs/InP heterostructures

F. Delahaye*, D. Dominguez, F. Alexandre, J. P. Andre, J. P. Hirtz, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

49 Scopus citations


Measurements of the quantized Hall resistance RH (i) (i = 2 or 4) in 7 different heterostructures (six GaAs based, one InP based) are reported. RH (i) is measured in terms of ΩLCIE by means of a resistance-ratio measurement bridge using a cryogenic current comparator. The peak-to-peak scatter of the results is 8.5 × 10-8. An estimation of RH (i = 2) in terms of ΩLCIE is given with a 1 σ (one standard deviation) total uncertainty of 2.2 × 10-8.

Original languageEnglish (US)
Article number005
Pages (from-to)103-110
Number of pages8
Issue number2
StatePublished - 1986

ASJC Scopus subject areas

  • Engineering(all)


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