Precise quantized hall resistance measurements in GaAs/Al xGa1-xAs and InxGa1-xAs/InP heterostructures

F. Delahaye; D. Dominguez; F. Alexandre; J. P. Andre; J. P. Hirtz; M. Razeghi

doi:10.1088/0026-1394/22/2/005

Precise quantized hall resistance measurements in GaAs/Al _xGa_1-xAs and In_xGa_1-xAs/InP heterostructures

F. Delahaye^*, D. Dominguez, F. Alexandre, J. P. Andre, J. P. Hirtz, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

Measurements of the quantized Hall resistance R_H (i) (i = 2 or 4) in 7 different heterostructures (six GaAs based, one InP based) are reported. R_H (i) is measured in terms of Ω_LCIE by means of a resistance-ratio measurement bridge using a cryogenic current comparator. The peak-to-peak scatter of the results is 8.5 × 10^-8. An estimation of R_H (i = 2) in terms of Ω_LCIE is given with a 1 σ (one standard deviation) total uncertainty of 2.2 × 10^-8.

Original language	English (US)
Article number	005
Pages (from-to)	103-110
Number of pages	8
Journal	Metrologia
Volume	22
Issue number	2
DOIs	https://doi.org/10.1088/0026-1394/22/2/005
State	Published - 1986

ASJC Scopus subject areas

General Engineering

Access to Document

10.1088/0026-1394/22/2/005

Cite this

@article{2c999e569f6e452e824833f179785ca5,

title = "Precise quantized hall resistance measurements in GaAs/Al xGa1-xAs and InxGa1-xAs/InP heterostructures",

abstract = "Measurements of the quantized Hall resistance RH (i) (i = 2 or 4) in 7 different heterostructures (six GaAs based, one InP based) are reported. RH (i) is measured in terms of ΩLCIE by means of a resistance-ratio measurement bridge using a cryogenic current comparator. The peak-to-peak scatter of the results is 8.5 × 10-8. An estimation of RH (i = 2) in terms of ΩLCIE is given with a 1 σ (one standard deviation) total uncertainty of 2.2 × 10-8.",

author = "F. Delahaye and D. Dominguez and F. Alexandre and Andre, {J. P.} and Hirtz, {J. P.} and M. Razeghi",

year = "1986",

doi = "10.1088/0026-1394/22/2/005",

language = "English (US)",

volume = "22",

pages = "103--110",

journal = "Metrologia",

issn = "0026-1394",

publisher = "IOP Publishing Ltd.",

number = "2",

}

TY - JOUR

T1 - Precise quantized hall resistance measurements in GaAs/Al xGa1-xAs and InxGa1-xAs/InP heterostructures

AU - Delahaye, F.

AU - Dominguez, D.

AU - Alexandre, F.

AU - Andre, J. P.

AU - Hirtz, J. P.

AU - Razeghi, M.

PY - 1986

Y1 - 1986

N2 - Measurements of the quantized Hall resistance RH (i) (i = 2 or 4) in 7 different heterostructures (six GaAs based, one InP based) are reported. RH (i) is measured in terms of ΩLCIE by means of a resistance-ratio measurement bridge using a cryogenic current comparator. The peak-to-peak scatter of the results is 8.5 × 10-8. An estimation of RH (i = 2) in terms of ΩLCIE is given with a 1 σ (one standard deviation) total uncertainty of 2.2 × 10-8.

AB - Measurements of the quantized Hall resistance RH (i) (i = 2 or 4) in 7 different heterostructures (six GaAs based, one InP based) are reported. RH (i) is measured in terms of ΩLCIE by means of a resistance-ratio measurement bridge using a cryogenic current comparator. The peak-to-peak scatter of the results is 8.5 × 10-8. An estimation of RH (i = 2) in terms of ΩLCIE is given with a 1 σ (one standard deviation) total uncertainty of 2.2 × 10-8.

UR - http://www.scopus.com/inward/record.url?scp=0022582166&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022582166&partnerID=8YFLogxK

U2 - 10.1088/0026-1394/22/2/005

DO - 10.1088/0026-1394/22/2/005

M3 - Article

AN - SCOPUS:0022582166

SN - 0026-1394

VL - 22

SP - 103

EP - 110

JO - Metrologia

JF - Metrologia

IS - 2

M1 - 005

ER -

Precise quantized hall resistance measurements in GaAs/Al _xGa_1-xAs and In_xGa_1-xAs/InP heterostructures

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this