TY - GEN
T1 - Precision Teng-Man electro-optic measurements using highly near-infrared transparent electrodes
AU - Wang, Lian
AU - Yang, Yu
AU - Liu, Zhifu
AU - Marks, Tobin J.
AU - Ho, Seng Tiong
PY - 2006
Y1 - 2006
N2 - A series of highly near-infrared (MIR) transparent In2O 3 thin films has been grown by ion-assisted deposition (IAD) at room temperature, and their optical and electrical properties characterized. The NIR transparency and the plasma edge can be engineered through control of the film deposition conditions. The as-deposited In2O3 thin films were employed as transparent electrodes for direct electro-optic (EO) characterization measurements via the Teng-Man technique. Using LiNbO 3 as the standard, the relationship between the degree of electrode NIR transparency and Teng-Man EO measurement accuracy was evaluated. It is found that In2O3 electrodes can be tailored to be highly NIR transparent, thus providing more accurate Teng-Man EO coefficient quantification than ITO (tin-doped indium oxide). In addition, the EO coefficients of stilbazolium-based self-assembled superlattice (SAS) thin films were directly determined for the first time by the Teng-Man technique using an optimized In2O3 electrode. EO coefficients r33 of 42.2, 13.1, and 6.4 pm/V are obtained at 633, 1064, and 1310 nm, respectively.
AB - A series of highly near-infrared (MIR) transparent In2O 3 thin films has been grown by ion-assisted deposition (IAD) at room temperature, and their optical and electrical properties characterized. The NIR transparency and the plasma edge can be engineered through control of the film deposition conditions. The as-deposited In2O3 thin films were employed as transparent electrodes for direct electro-optic (EO) characterization measurements via the Teng-Man technique. Using LiNbO 3 as the standard, the relationship between the degree of electrode NIR transparency and Teng-Man EO measurement accuracy was evaluated. It is found that In2O3 electrodes can be tailored to be highly NIR transparent, thus providing more accurate Teng-Man EO coefficient quantification than ITO (tin-doped indium oxide). In addition, the EO coefficients of stilbazolium-based self-assembled superlattice (SAS) thin films were directly determined for the first time by the Teng-Man technique using an optimized In2O3 electrode. EO coefficients r33 of 42.2, 13.1, and 6.4 pm/V are obtained at 633, 1064, and 1310 nm, respectively.
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U2 - 10.1557/proc-0928-gg09-08
DO - 10.1557/proc-0928-gg09-08
M3 - Conference contribution
AN - SCOPUS:33947708002
SN - 1558998853
SN - 9781558998858
T3 - Materials Research Society Symposium Proceedings
SP - 37
EP - 49
BT - Current and Future Trends of Functional Oxide Films
PB - Materials Research Society
T2 - 2006 MRS Spring Meeting
Y2 - 17 April 2006 through 21 April 2006
ER -