Preparation and Properties of Nb/Al-AlOx/Nb Multilayers

H. Kohlstedt; G. Hallmanns; I. P. Nevirkovets; D. Guggi; C. Heiden

doi:10.1109/77.233939

Preparation and Properties of Nb/Al-AlOx/Nb Multilayers

H. Kohlstedt, G. Hallmanns, I. P. Nevirkovets, D. Guggi, C. Heiden

Research output: Contribution to journal › Letter › peer-review

40 Scopus citations

Abstract

We have deposited Nb/Al-A10x/Nb multilayers on Si substrates by DC and RF magnetron sputtering. To assist the fabrication of stacked tunnel junctions we investigated the layers by transmission electron microscopy and anodization spectroscopy. The accumulated internal mechanical stress in the niobium films depends on the argon sputtering pressure and was analyzed by the X-ray stress evaluation method. Up to ten junctions in one stack were prepared. Performance of the junctions is discussed on basis of I-V characteristics and Fraunhofer patterns.

Original language	English (US)
Pages (from-to)	2197-2200
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	3
Issue number	1
DOIs	https://doi.org/10.1109/77.233939
State	Published - Mar 1993
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "We have deposited Nb/Al-A10x/Nb multilayers on Si substrates by DC and RF magnetron sputtering. To assist the fabrication of stacked tunnel junctions we investigated the layers by transmission electron microscopy and anodization spectroscopy. The accumulated internal mechanical stress in the niobium films depends on the argon sputtering pressure and was analyzed by the X-ray stress evaluation method. Up to ten junctions in one stack were prepared. Performance of the junctions is discussed on basis of I-V characteristics and Fraunhofer patterns.",

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AU - Kohlstedt, H.

AU - Hallmanns, G.

AU - Nevirkovets, I. P.

AU - Guggi, D.

AU - Heiden, C.

PY - 1993/3

Y1 - 1993/3

N2 - We have deposited Nb/Al-A10x/Nb multilayers on Si substrates by DC and RF magnetron sputtering. To assist the fabrication of stacked tunnel junctions we investigated the layers by transmission electron microscopy and anodization spectroscopy. The accumulated internal mechanical stress in the niobium films depends on the argon sputtering pressure and was analyzed by the X-ray stress evaluation method. Up to ten junctions in one stack were prepared. Performance of the junctions is discussed on basis of I-V characteristics and Fraunhofer patterns.

AB - We have deposited Nb/Al-A10x/Nb multilayers on Si substrates by DC and RF magnetron sputtering. To assist the fabrication of stacked tunnel junctions we investigated the layers by transmission electron microscopy and anodization spectroscopy. The accumulated internal mechanical stress in the niobium films depends on the argon sputtering pressure and was analyzed by the X-ray stress evaluation method. Up to ten junctions in one stack were prepared. Performance of the junctions is discussed on basis of I-V characteristics and Fraunhofer patterns.

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Preparation and Properties of Nb/Al-AlOx/Nb Multilayers

Abstract

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