Preparation of Ba1-xSrxTiO3 thin films by metalorganic chemical vapor deposition and their properties

S. R. Gilbert; B. W. Wessels; D. A. Neumayer; T. J. Marks; J. L. Schindler; C. R. Kannewurf

Preparation of Ba_1-xSr_xTiO₃ thin films by metalorganic chemical vapor deposition and their properties

S. R. Gilbert^*, B. W. Wessels, D. A. Neumayer, T. J. Marks, J. L. Schindler, C. R. Kannewurf

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Scopus citations

Abstract

Ba_1-xSr_xTiO₃ thin films were deposited over the entire solid solution range by low pressure metal-organic chemical deposition. The metal-organic precursors employed were titanium tetraisopropoxide and barium and strontium(hexafluoroacetylacetonate)₂·tetraglyme. The substrates used were LaAlO₃ and (100) p-type Si. Ba_1-x Sr_xTiO₃ films deposited on LaAlO₃ were epitaxial, while the films deposited on Si showed no texture. Auger spectroscopy indicated that single phase Ba_-xSr_xTiO₃ films did not contain detectable levels of fluorine contamination. The dielectric constant was found to depend upon the solid solution composition x, and values as large as 220 measured at a frequency of 1 MHz were obtained. The resistivities of the as-deposited films ranged from 10³ to 10⁸ Ω-cm. Temperature dependent resistivity measurements indicated the films were slightly oxygen deficient.

Original language	English (US)
Title of host publication	Metal-Organic Chemical Vapor Deposition of Electronic Ceramics
Editors	Seshu B. Desu, David B. Beach, Bruce W. Wessels, Suleyman Gokoglu
Publisher	Publ by Materials Research Society
Pages	41-46
Number of pages	6
ISBN (Print)	1558992340
State	Published - 1994
Event	Proceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA Duration: Nov 29 1993 → Dec 3 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	335
ISSN (Print)	0272-9172

Other

Other	Proceedings of the 1993 Fall Meeting of the Materials Research Society
City	Boston, MA, USA
Period	11/29/93 → 12/3/93

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Gilbert, S. R., Wessels, B. W., Neumayer, D. A., Marks, T. J., Schindler, J. L., & Kannewurf, C. R. (1994). Preparation of Ba_1-xSr_xTiO₃ thin films by metalorganic chemical vapor deposition and their properties. In S. B. Desu, D. B. Beach, B. W. Wessels, & S. Gokoglu (Eds.), Metal-Organic Chemical Vapor Deposition of Electronic Ceramics (pp. 41-46). (Materials Research Society Symposium Proceedings; Vol. 335). Publ by Materials Research Society.

Gilbert, S. R. ; Wessels, B. W. ; Neumayer, D. A. et al. / Preparation of Ba_1-xSr_xTiO₃ thin films by metalorganic chemical vapor deposition and their properties. Metal-Organic Chemical Vapor Deposition of Electronic Ceramics. editor / Seshu B. Desu ; David B. Beach ; Bruce W. Wessels ; Suleyman Gokoglu. Publ by Materials Research Society, 1994. pp. 41-46 (Materials Research Society Symposium Proceedings).

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title = "Preparation of Ba1-xSrxTiO3 thin films by metalorganic chemical vapor deposition and their properties",

abstract = "Ba1-xSrxTiO3 thin films were deposited over the entire solid solution range by low pressure metal-organic chemical deposition. The metal-organic precursors employed were titanium tetraisopropoxide and barium and strontium(hexafluoroacetylacetonate)2·tetraglyme. The substrates used were LaAlO3 and (100) p-type Si. Ba1-x SrxTiO3 films deposited on LaAlO3 were epitaxial, while the films deposited on Si showed no texture. Auger spectroscopy indicated that single phase Ba-xSrxTiO3 films did not contain detectable levels of fluorine contamination. The dielectric constant was found to depend upon the solid solution composition x, and values as large as 220 measured at a frequency of 1 MHz were obtained. The resistivities of the as-deposited films ranged from 103 to 108 Ω-cm. Temperature dependent resistivity measurements indicated the films were slightly oxygen deficient.",

author = "Gilbert, {S. R.} and Wessels, {B. W.} and Neumayer, {D. A.} and Marks, {T. J.} and Schindler, {J. L.} and Kannewurf, {C. R.}",

year = "1994",

language = "English (US)",

isbn = "1558992340",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "41--46",

editor = "Desu, {Seshu B.} and Beach, {David B.} and Wessels, {Bruce W.} and Suleyman Gokoglu",

booktitle = "Metal-Organic Chemical Vapor Deposition of Electronic Ceramics",

note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 29-11-1993 Through 03-12-1993",

}

Gilbert, SR, Wessels, BW, Neumayer, DA, Marks, TJ, Schindler, JL & Kannewurf, CR 1994, Preparation of Ba_1-xSr_xTiO₃ thin films by metalorganic chemical vapor deposition and their properties. in SB Desu, DB Beach, BW Wessels & S Gokoglu (eds), Metal-Organic Chemical Vapor Deposition of Electronic Ceramics. Materials Research Society Symposium Proceedings, vol. 335, Publ by Materials Research Society, pp. 41-46, Proceedings of the 1993 Fall Meeting of the Materials Research Society, Boston, MA, USA, 11/29/93.

Preparation of Ba_1-xSr_xTiO₃ thin films by metalorganic chemical vapor deposition and their properties. / Gilbert, S. R.; Wessels, B. W.; Neumayer, D. A. et al.
Metal-Organic Chemical Vapor Deposition of Electronic Ceramics. ed. / Seshu B. Desu; David B. Beach; Bruce W. Wessels; Suleyman Gokoglu. Publ by Materials Research Society, 1994. p. 41-46 (Materials Research Society Symposium Proceedings; Vol. 335).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Preparation of Ba1-xSrxTiO3 thin films by metalorganic chemical vapor deposition and their properties

AU - Gilbert, S. R.

AU - Wessels, B. W.

AU - Neumayer, D. A.

AU - Marks, T. J.

AU - Schindler, J. L.

AU - Kannewurf, C. R.

PY - 1994

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N2 - Ba1-xSrxTiO3 thin films were deposited over the entire solid solution range by low pressure metal-organic chemical deposition. The metal-organic precursors employed were titanium tetraisopropoxide and barium and strontium(hexafluoroacetylacetonate)2·tetraglyme. The substrates used were LaAlO3 and (100) p-type Si. Ba1-x SrxTiO3 films deposited on LaAlO3 were epitaxial, while the films deposited on Si showed no texture. Auger spectroscopy indicated that single phase Ba-xSrxTiO3 films did not contain detectable levels of fluorine contamination. The dielectric constant was found to depend upon the solid solution composition x, and values as large as 220 measured at a frequency of 1 MHz were obtained. The resistivities of the as-deposited films ranged from 103 to 108 Ω-cm. Temperature dependent resistivity measurements indicated the films were slightly oxygen deficient.

AB - Ba1-xSrxTiO3 thin films were deposited over the entire solid solution range by low pressure metal-organic chemical deposition. The metal-organic precursors employed were titanium tetraisopropoxide and barium and strontium(hexafluoroacetylacetonate)2·tetraglyme. The substrates used were LaAlO3 and (100) p-type Si. Ba1-x SrxTiO3 films deposited on LaAlO3 were epitaxial, while the films deposited on Si showed no texture. Auger spectroscopy indicated that single phase Ba-xSrxTiO3 films did not contain detectable levels of fluorine contamination. The dielectric constant was found to depend upon the solid solution composition x, and values as large as 220 measured at a frequency of 1 MHz were obtained. The resistivities of the as-deposited films ranged from 103 to 108 Ω-cm. Temperature dependent resistivity measurements indicated the films were slightly oxygen deficient.

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M3 - Conference contribution

AN - SCOPUS:0028121924

SN - 1558992340

T3 - Materials Research Society Symposium Proceedings

SP - 41

EP - 46

BT - Metal-Organic Chemical Vapor Deposition of Electronic Ceramics

A2 - Desu, Seshu B.

A2 - Beach, David B.

A2 - Wessels, Bruce W.

A2 - Gokoglu, Suleyman

PB - Publ by Materials Research Society

T2 - Proceedings of the 1993 Fall Meeting of the Materials Research Society

Y2 - 29 November 1993 through 3 December 1993

ER -

Gilbert SR, Wessels BW, Neumayer DA, Marks TJ, Schindler JL, Kannewurf CR. Preparation of Ba_1-xSr_xTiO₃ thin films by metalorganic chemical vapor deposition and their properties. In Desu SB, Beach DB, Wessels BW, Gokoglu S, editors, Metal-Organic Chemical Vapor Deposition of Electronic Ceramics. Publ by Materials Research Society. 1994. p. 41-46. (Materials Research Society Symposium Proceedings).