Preparation of exfoliated Bi 2Te 3 thin films

Jiajun Luo; Dattatray Late; Isaac Wu; Kanishka Biswas; Mercouri Kanatzidis; Matthew Grayson

doi:10.1063/1.3671716

Preparation of exfoliated Bi ₂Te ₃ thin films

Jiajun Luo^*, Dattatray Late, Isaac Wu, Kanishka Biswas, Mercouri Kanatzidis, Matthew Grayson

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Bi ₂Te ₃, recently recognized as a "topological insulator", is proposed to have enhanced electrical and thermoelectric properties due to the topological surface state. In this work, we describe our technique for synthesizing Bi ₂Te ₃ thin films with the Scotch tape method. We also describe strategies for fabricating samples for transport and thermoelectric measurements. Preliminary data of carrier density and mobility at room temperature was obtained.

Original language	English (US)
Title of host publication	15th International Conference on Narrow Gap Systems, NGS15
Pages	135-138
Number of pages	4
DOIs	https://doi.org/10.1063/1.3671716
State	Published - 2011
Event	15th International Conference on Narrow Gap Systems, NGS15 - Blacksburg, VA, United States Duration: Aug 1 2011 → Aug 5 2011

Publication series

Name	AIP Conference Proceedings
Volume	1416
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	15th International Conference on Narrow Gap Systems, NGS15
Country/Territory	United States
City	Blacksburg, VA
Period	8/1/11 → 8/5/11

Keywords

Electron-beam fabrication
Thin film exfoliation
Topological Insulator

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.3671716

Cite this

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title = "Preparation of exfoliated Bi 2Te 3 thin films",

abstract = "Bi 2Te 3, recently recognized as a {"}topological insulator{"}, is proposed to have enhanced electrical and thermoelectric properties due to the topological surface state. In this work, we describe our technique for synthesizing Bi 2Te 3 thin films with the Scotch tape method. We also describe strategies for fabricating samples for transport and thermoelectric measurements. Preliminary data of carrier density and mobility at room temperature was obtained.",

keywords = "Electron-beam fabrication, Thin film exfoliation, Topological Insulator",

author = "Jiajun Luo and Dattatray Late and Isaac Wu and Kanishka Biswas and Mercouri Kanatzidis and Matthew Grayson",

year = "2011",

doi = "10.1063/1.3671716",

language = "English (US)",

isbn = "9780735409934",

series = "AIP Conference Proceedings",

pages = "135--138",

booktitle = "15th International Conference on Narrow Gap Systems, NGS15",

note = "15th International Conference on Narrow Gap Systems, NGS15 ; Conference date: 01-08-2011 Through 05-08-2011",

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T1 - Preparation of exfoliated Bi 2Te 3 thin films

AU - Luo, Jiajun

AU - Late, Dattatray

AU - Wu, Isaac

AU - Biswas, Kanishka

AU - Kanatzidis, Mercouri

AU - Grayson, Matthew

PY - 2011

Y1 - 2011

N2 - Bi 2Te 3, recently recognized as a "topological insulator", is proposed to have enhanced electrical and thermoelectric properties due to the topological surface state. In this work, we describe our technique for synthesizing Bi 2Te 3 thin films with the Scotch tape method. We also describe strategies for fabricating samples for transport and thermoelectric measurements. Preliminary data of carrier density and mobility at room temperature was obtained.

AB - Bi 2Te 3, recently recognized as a "topological insulator", is proposed to have enhanced electrical and thermoelectric properties due to the topological surface state. In this work, we describe our technique for synthesizing Bi 2Te 3 thin films with the Scotch tape method. We also describe strategies for fabricating samples for transport and thermoelectric measurements. Preliminary data of carrier density and mobility at room temperature was obtained.

KW - Electron-beam fabrication

KW - Thin film exfoliation

KW - Topological Insulator

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DO - 10.1063/1.3671716

M3 - Conference contribution

AN - SCOPUS:84855801012

SN - 9780735409934

T3 - AIP Conference Proceedings

SP - 135

EP - 138

BT - 15th International Conference on Narrow Gap Systems, NGS15

T2 - 15th International Conference on Narrow Gap Systems, NGS15

Y2 - 1 August 2011 through 5 August 2011

ER -