Preparation of Large Area NbN/AlN/NbN Josephson Junctions

S. N. Song, B. Y. Jin, H. Q. Yang, J. B. Ketterson, Ivan K. Schuller

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

AℓN has been used as a barrier material in large josephson junctions. The chemical and structural compatibility of AℓN with NbN make it possible to fabricate NbN/AℓN/NbN junctions by sequential reactive sputtering in a common Ar and N2 atmosphere. In a junction with an area of about 1.0×1.0 mm2, having a transition temperature of 14.5K. the measured I-V and first derivative curves yield a sum gap value of about 3.0 meV.

Original languageEnglish (US)
Pages (from-to)1615-1616
Number of pages2
JournalJapanese Journal of Applied Physics
Volume26
Issue numberS3-2
DOIs
StatePublished - Jan 1987

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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