Preparation of Large Area NbN/AlN/NbN Josephson Junctions

S. N. Song; B. Y. Jin; H. Q. Yang; J. B. Ketterson; Ivan K. Schuller

doi:10.7567/JJAPS.26S3.1615

Preparation of Large Area NbN/AlN/NbN Josephson Junctions

S. N. Song, B. Y. Jin, H. Q. Yang, J. B. Ketterson, Ivan K. Schuller

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

AℓN has been used as a barrier material in large josephson junctions. The chemical and structural compatibility of AℓN with NbN make it possible to fabricate NbN/AℓN/NbN junctions by sequential reactive sputtering in a common Ar and N2 atmosphere. In a junction with an area of about 1.0×1.0 mm², having a transition temperature of 14.5K. the measured I-V and first derivative curves yield a sum gap value of about 3.0 meV.

Original language	English (US)
Pages (from-to)	1615-1616
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	26
Issue number	S3-2
DOIs	https://doi.org/10.7567/JJAPS.26S3.1615
State	Published - Jan 1987

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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abstract = "AℓN has been used as a barrier material in large josephson junctions. The chemical and structural compatibility of AℓN with NbN make it possible to fabricate NbN/AℓN/NbN junctions by sequential reactive sputtering in a common Ar and N2 atmosphere. In a junction with an area of about 1.0×1.0 mm2, having a transition temperature of 14.5K. the measured I-V and first derivative curves yield a sum gap value of about 3.0 meV.",

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AU - Song, S. N.

AU - Jin, B. Y.

AU - Yang, H. Q.

AU - Ketterson, J. B.

AU - Schuller, Ivan K.

PY - 1987/1

Y1 - 1987/1

N2 - AℓN has been used as a barrier material in large josephson junctions. The chemical and structural compatibility of AℓN with NbN make it possible to fabricate NbN/AℓN/NbN junctions by sequential reactive sputtering in a common Ar and N2 atmosphere. In a junction with an area of about 1.0×1.0 mm2, having a transition temperature of 14.5K. the measured I-V and first derivative curves yield a sum gap value of about 3.0 meV.

AB - AℓN has been used as a barrier material in large josephson junctions. The chemical and structural compatibility of AℓN with NbN make it possible to fabricate NbN/AℓN/NbN junctions by sequential reactive sputtering in a common Ar and N2 atmosphere. In a junction with an area of about 1.0×1.0 mm2, having a transition temperature of 14.5K. the measured I-V and first derivative curves yield a sum gap value of about 3.0 meV.

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JO - Japanese Journal of Applied Physics

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ER -

Preparation of Large Area NbN/AlN/NbN Josephson Junctions

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