Pressure dependence of the blue luminescence in Mg-doped GaN

S. Ves*, U. D. Venkateswaran, I. Loa, K. Syassen, F. Shahedipour, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

We report the hydrostatic pressure dependence of the blue luminescence band observed at ∼2.8 eV in heavily magnesium-doped GaN (GaN:Mg) epilayers grown on sapphire by metalorganic chemical vapor deposition. Photoluminescence (PL) studies carried out up to 6 and 8 GPa, respectively, at room and low (10 K) temperature show that the pressure-induced energy shift of this PL band is ∼26 meV/GPa. This blueshift is about 40% less than the shift observed for the band edge in GaN. A substantially smaller pressure coefficient suggests that the 2.8 eV PL transition is associated with the recombination via deep centers.

Original languageEnglish (US)
Pages (from-to)2536-2538
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number16
DOIs
StatePublished - Oct 16 2000

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Pressure dependence of the blue luminescence in Mg-doped GaN'. Together they form a unique fingerprint.

  • Cite this

    Ves, S., Venkateswaran, U. D., Loa, I., Syassen, K., Shahedipour, F., & Wessels, B. W. (2000). Pressure dependence of the blue luminescence in Mg-doped GaN. Applied Physics Letters, 77(16), 2536-2538. https://doi.org/10.1063/1.1319180