Pressure dependence study of the effective mass in Ga0.47In0.53As/InP heterojunctions

D. Gauthier*, L. Dmowski, J. C. Portal, D. Leadley, M. A. Hopkins, M. A. Brummell, R. J. Nicholas, M. Razeghi, P. Maurel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

A study of the effective mass in GaInAs/InP heterojunctions under hydrostatic pressure up to 15 kbars is presented. Earlier results have shown the importance of hydrostatic pressure effects on the band parameters of the heterojunction to explain the experimental decrease of the carrier concentration with pressure at the interface (1). Here magnetophonon resonance experiments are performed to work out the increase of mass with pressure in our samples. The effective mass at atmospheric pressure is deduced from high temperature cyclotron resonance experiments and then used to calculate the frequency of the phonon interacting with the 2D electron gas (wo). The value of wo is found to be dependent on the carrier concentration of the measured samples. The lowest value is found for the highest carrier concentration sample. A band edge effective mass increase of 1 ± .1% kbar is found in the highest carrier concentration sample. This is two times smaller than the rate found experimentally in GaInAs bulk material and slightly smaller than in an AlInAs/GaInAs heterojunction. The experimental increase could be fitted with multiband k.p theory assuming no pressure dependence for the conduction band-valence band matrix element Ep. However at lower concentration a variation of the matrix element Ep with pressure has to be considered.

Original languageEnglish (US)
Pages (from-to)201-206
Number of pages6
JournalSuperlattices and Microstructures
Volume4
Issue number2
DOIs
StatePublished - 1988

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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