Pressure dependent Raman, and conductivity studies of the fast ion conductors Cu2HgI4, Ag2HgI4 and Tl2ZnI4

J. I. McOmber*, D. F. Shriver, M. A. Ratner, J. R. Ferraro, P. La Bonville Walling

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

High pressure Raman, electrical conductivity, and optical microscopic studies on the ternary fast ion conductor Cu2HgI4 were undertaken to delineate the pressure-temperature phase diagram. In addition, comparison of the pressure dependence of Raman shifts in Cu2HgI4 and Tl2ZnI4 was used to assist in making vibrational assignments whenever possible.

Original languageEnglish (US)
Pages (from-to)903-909
Number of pages7
JournalJournal of Physics and Chemistry of Solids
Volume43
Issue number9
DOIs
StatePublished - 1982

Funding

Acknowledgements--We appreciate informative discussions with D. H. Whitmore, B. Phipps, and C. Chaney. This research was supported by the National Science Foundation Materials Research Laboratory Program through the Northwestern University Materials Research Center (Grant DMR 79-23575) and at Argonne Laboratory by the Department of Energy.

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics

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