Pressure-induced depopulation of the first excited subband in GaInAs/InP heterojunctions

D. Gauthier*, J. C. Portal, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The authors present recent experimental results where the evidence for the total depopulation of the first excited electric subband with pressure is demonstrated. The total electron concentration decreases at a rate of 2.7% kbar-1, much higher than in previous experiments. The experimental situation can be fitted with the triangular-well approximation if they both assume the change with pressure of the conduction band discontinuity Delta Ec and the deepening of a deep impurity level with activation energy of the order 160 meV at zero pressure.

Original languageEnglish (US)
Article number003
Pages (from-to)218-219
Number of pages2
JournalSemiconductor Science and Technology
Volume4
Issue number4
DOIs
StatePublished - Dec 1 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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