Pressure-induced depopulation of the first excited subband in GaInAs/InP heterojunctions

D. Gauthier; J. C. Portal; M. Razeghi

doi:10.1088/0268-1242/4/4/003

Pressure-induced depopulation of the first excited subband in GaInAs/InP heterojunctions

D. Gauthier^*, J. C. Portal, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The authors present recent experimental results where the evidence for the total depopulation of the first excited electric subband with pressure is demonstrated. The total electron concentration decreases at a rate of 2.7% kbar^-1, much higher than in previous experiments. The experimental situation can be fitted with the triangular-well approximation if they both assume the change with pressure of the conduction band discontinuity Delta E_c and the deepening of a deep impurity level with activation energy of the order 160 meV at zero pressure.

Original language	English (US)
Article number	003
Pages (from-to)	218-219
Number of pages	2
Journal	Semiconductor Science and Technology
Volume	4
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/4/4/003
State	Published - Dec 1 1989

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/4/4/003

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title = "Pressure-induced depopulation of the first excited subband in GaInAs/InP heterojunctions",

abstract = "The authors present recent experimental results where the evidence for the total depopulation of the first excited electric subband with pressure is demonstrated. The total electron concentration decreases at a rate of 2.7\% kbar-1, much higher than in previous experiments. The experimental situation can be fitted with the triangular-well approximation if they both assume the change with pressure of the conduction band discontinuity Delta Ec and the deepening of a deep impurity level with activation energy of the order 160 meV at zero pressure.",

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T1 - Pressure-induced depopulation of the first excited subband in GaInAs/InP heterojunctions

AU - Gauthier, D.

AU - Portal, J. C.

AU - Razeghi, M.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - The authors present recent experimental results where the evidence for the total depopulation of the first excited electric subband with pressure is demonstrated. The total electron concentration decreases at a rate of 2.7% kbar-1, much higher than in previous experiments. The experimental situation can be fitted with the triangular-well approximation if they both assume the change with pressure of the conduction band discontinuity Delta Ec and the deepening of a deep impurity level with activation energy of the order 160 meV at zero pressure.

AB - The authors present recent experimental results where the evidence for the total depopulation of the first excited electric subband with pressure is demonstrated. The total electron concentration decreases at a rate of 2.7% kbar-1, much higher than in previous experiments. The experimental situation can be fitted with the triangular-well approximation if they both assume the change with pressure of the conduction band discontinuity Delta Ec and the deepening of a deep impurity level with activation energy of the order 160 meV at zero pressure.

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U2 - 10.1088/0268-1242/4/4/003

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M1 - 003

ER -

Pressure-induced depopulation of the first excited subband in GaInAs/InP heterojunctions

Abstract

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