PRIMARY AND SECONDARY ION DEPOSITION OF EPITAXIAL SEMICONDUCTOR FILMS FROM LASER-INDUCED PLASMAS.

D. Lubben*, S. A. Barnett, K. Suzuki, J. E. Greene

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Primary and secondary ion deposition of epitaxial semiconductor films from laser-induced plasmas is reported. Primary ion deposition was performed by placing substrates on an ion target/substrate heater biased to give additional ion acceleration as required. Secondary deposition was achieved by biasing the ion target, in this case a wafer of the same material as the laser target, sufficiently negative to sputter target material onto a third electrode.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsA.Wayne Johnson, Daniel J. Ehrlich, Howard R. Schlossberg
PublisherNorth-Holland
Pages359-365
Number of pages7
ISBN (Print)0444008942
StatePublished - Dec 1 1984

Publication series

NameMaterials Research Society Symposia Proceedings
Volume29
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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