Printable, flexible, and stretchable forms of ultrananocrystalline diamond with applications in thermal management

Tae Ho Kim; Won Mook Choi; Dae Hyeong Kim; Matthew A. Meitl; Etienne Menard; Hanqing Jiang; John A. Carlisle; John A. Rogers

doi:10.1002/adma.200702434

Printable, flexible, and stretchable forms of ultrananocrystalline diamond with applications in thermal management

Tae Ho Kim^*, Won Mook Choi, Dae Hyeong Kim, Matthew A. Meitl, Etienne Menard, Hanqing Jiang, John A. Carlisle, John A. Rogers

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

Etching and printing techniques that are used to manipulate thin film microstructures of diamond in a way that allows integration with substrates and creation of structural forms that are incompatible with conventional processing was investigated. A SiO₂ layer was deposited by plasma-enhanced chemical vapor deposition (PECVD) using SiH₄ and N₂O at 250°C. Photolithography with AZ 5214 defined a pattern of photoresist (PR) on the surface of the SiO₂ (300 nm)/UNCD (400 nm)/SiO₂/Si substrate. The PR served as a mask for RIE etching of the PECVD SiO₂ layer with a Cf₄ plasma. It was observed that the resulting capabilities could be useful for certain applications, such as those in thermal management for plastic electronics.

Original language	English (US)
Pages (from-to)	2171-2176
Number of pages	6
Journal	Advanced Materials
Volume	20
Issue number	11
DOIs	https://doi.org/10.1002/adma.200702434
State	Published - Jun 4 2008

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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@article{582dc230481d4517b562e822153443f4,

title = "Printable, flexible, and stretchable forms of ultrananocrystalline diamond with applications in thermal management",

abstract = "Etching and printing techniques that are used to manipulate thin film microstructures of diamond in a way that allows integration with substrates and creation of structural forms that are incompatible with conventional processing was investigated. A SiO2 layer was deposited by plasma-enhanced chemical vapor deposition (PECVD) using SiH4 and N2O at 250°C. Photolithography with AZ 5214 defined a pattern of photoresist (PR) on the surface of the SiO2 (300 nm)/UNCD (400 nm)/SiO2/Si substrate. The PR served as a mask for RIE etching of the PECVD SiO2 layer with a Cf4 plasma. It was observed that the resulting capabilities could be useful for certain applications, such as those in thermal management for plastic electronics.",

author = "Kim, {Tae Ho} and Choi, {Won Mook} and Kim, {Dae Hyeong} and Meitl, {Matthew A.} and Etienne Menard and Hanqing Jiang and Carlisle, {John A.} and Rogers, {John A.}",

year = "2008",

month = jun,

day = "4",

doi = "10.1002/adma.200702434",

language = "English (US)",

volume = "20",

pages = "2171--2176",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "11",

}

TY - JOUR

T1 - Printable, flexible, and stretchable forms of ultrananocrystalline diamond with applications in thermal management

AU - Kim, Tae Ho

AU - Choi, Won Mook

AU - Kim, Dae Hyeong

AU - Meitl, Matthew A.

AU - Menard, Etienne

AU - Jiang, Hanqing

AU - Carlisle, John A.

AU - Rogers, John A.

PY - 2008/6/4

Y1 - 2008/6/4

N2 - Etching and printing techniques that are used to manipulate thin film microstructures of diamond in a way that allows integration with substrates and creation of structural forms that are incompatible with conventional processing was investigated. A SiO2 layer was deposited by plasma-enhanced chemical vapor deposition (PECVD) using SiH4 and N2O at 250°C. Photolithography with AZ 5214 defined a pattern of photoresist (PR) on the surface of the SiO2 (300 nm)/UNCD (400 nm)/SiO2/Si substrate. The PR served as a mask for RIE etching of the PECVD SiO2 layer with a Cf4 plasma. It was observed that the resulting capabilities could be useful for certain applications, such as those in thermal management for plastic electronics.

AB - Etching and printing techniques that are used to manipulate thin film microstructures of diamond in a way that allows integration with substrates and creation of structural forms that are incompatible with conventional processing was investigated. A SiO2 layer was deposited by plasma-enhanced chemical vapor deposition (PECVD) using SiH4 and N2O at 250°C. Photolithography with AZ 5214 defined a pattern of photoresist (PR) on the surface of the SiO2 (300 nm)/UNCD (400 nm)/SiO2/Si substrate. The PR served as a mask for RIE etching of the PECVD SiO2 layer with a Cf4 plasma. It was observed that the resulting capabilities could be useful for certain applications, such as those in thermal management for plastic electronics.

UR - http://www.scopus.com/inward/record.url?scp=53549109807&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=53549109807&partnerID=8YFLogxK

U2 - 10.1002/adma.200702434

DO - 10.1002/adma.200702434

M3 - Article

AN - SCOPUS:53549109807

SN - 0935-9648

VL - 20

SP - 2171

EP - 2176

JO - Advanced Materials

JF - Advanced Materials

IS - 11

ER -

Printable, flexible, and stretchable forms of ultrananocrystalline diamond with applications in thermal management

Abstract

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