Etching and printing techniques that are used to manipulate thin film microstructures of diamond in a way that allows integration with substrates and creation of structural forms that are incompatible with conventional processing was investigated. A SiO2 layer was deposited by plasma-enhanced chemical vapor deposition (PECVD) using SiH4 and N2O at 250°C. Photolithography with AZ 5214 defined a pattern of photoresist (PR) on the surface of the SiO2 (300 nm)/UNCD (400 nm)/SiO2/Si substrate. The PR served as a mask for RIE etching of the PECVD SiO2 layer with a Cf4 plasma. It was observed that the resulting capabilities could be useful for certain applications, such as those in thermal management for plastic electronics.
|Original language||English (US)|
|Number of pages||6|
|State||Published - Jun 4 2008|
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering