TY - GEN
T1 - Probe of coherent and quantum states in narrow-gap semiconductors in the presence of strong spin-orbit coupling
AU - Khodaparast, Giti A.
AU - Bhowmick, Mithun
AU - Frazier, Matthew
AU - Kini, Rajeev N.
AU - Nontapot, Kanokwan
AU - Mishima, Tetsuya D.
AU - Santos, Michael B.
AU - Wessels, Bruce W.
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - In light of the growing interest in spin-related phenomena and devices, there is now a renewed interest in the science and engineering of narrow gap semiconductors. They offer several scientifically unique electronic features such as a small effective mass, a large g-factor, a high intrinsic mobility, and large spin-orbit coupling effects. Our studies have been focused on probing and controlling the coherent and quantum states in InSb quantum wells and InMnAs ferromagnetic semiconductors. Our observations are providing new information regarding the optical control of carriers and spins in these material systems. We demonstrated the generation of spin polarized photo-current in an InSb QW where a non-equilibrium spin population has been achieved by using circularly polarized radiation. In addition, the differential transmission measurements in InSb QWs demonstrated that the initial distribution function strongly influences the carrier relaxation dynamics. We employed the polarization-resolved differential transmission as well as the MOKE measurements to provide information on the spin relaxation dynamics in MOVPE grown InMnAs. Our measured T1 is comparable to the reported measurements in MBE grown InMnAs and several time resolved measurements on InAs.
AB - In light of the growing interest in spin-related phenomena and devices, there is now a renewed interest in the science and engineering of narrow gap semiconductors. They offer several scientifically unique electronic features such as a small effective mass, a large g-factor, a high intrinsic mobility, and large spin-orbit coupling effects. Our studies have been focused on probing and controlling the coherent and quantum states in InSb quantum wells and InMnAs ferromagnetic semiconductors. Our observations are providing new information regarding the optical control of carriers and spins in these material systems. We demonstrated the generation of spin polarized photo-current in an InSb QW where a non-equilibrium spin population has been achieved by using circularly polarized radiation. In addition, the differential transmission measurements in InSb QWs demonstrated that the initial distribution function strongly influences the carrier relaxation dynamics. We employed the polarization-resolved differential transmission as well as the MOKE measurements to provide information on the spin relaxation dynamics in MOVPE grown InMnAs. Our measured T1 is comparable to the reported measurements in MBE grown InMnAs and several time resolved measurements on InAs.
KW - Ferromagnetic semiconductors
KW - Narrow gap semiconductors
KW - Spin polarized current
KW - Time resolved spectroscopy
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UR - http://www.scopus.com/inward/citedby.url?scp=77951994209&partnerID=8YFLogxK
U2 - 10.1117/12.844931
DO - 10.1117/12.844931
M3 - Conference contribution
AN - SCOPUS:77951994209
SN - 9780819480040
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Quantum Sensing and Nanophotonic Devices VII
T2 - Quantum Sensing and Nanophotonic Devices VII
Y2 - 24 January 2010 through 28 January 2010
ER -