Probing the surface glass transition temperature of polymer films via organic semiconductor growth mode, microstructure, and thin-film transistor response

Choongik Kim, Antonio Facchetti*, Tobin J. Marks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

60 Scopus citations

Abstract

Organic semiconductor-based thin-film transistors (TFTs) have been extensively studied for organic electronics. In this study, we report on the influence of the polymer gate dielectric viscoelastic properties on overlying organic semiconductor film growth, film microstructure, and TFT response. From the knowledge that nanoscopically-confined thin polymer films exhibit glass-transition temperatures that deviate substantially from those of the corresponding bulk materials, we show here that pentacene (p-channel) and cyanoperylene (n-channel) films grown on polymeric gate dielectrics at temperatures well-below their bulk glass transition temperatures [T g(b)] exhibit morphological/microstructural transitions and dramatic OTFT performance discontinuities at well-defined temperatures [associated with a polymer "surface glass transition temperature," or Tg(s)]. These transitions are characteristic of the particular polymer architecture and independent of film thickness or overall film cooperative chain dynamics. Our results demonstrate that TFT measurements represent a new and sensitive methodology to probe polymer surface viscoelastic properties.

Original languageEnglish (US)
Pages (from-to)9122-9132
Number of pages11
JournalJournal of the American Chemical Society
Volume131
Issue number25
DOIs
StatePublished - Jul 1 2009

ASJC Scopus subject areas

  • Catalysis
  • General Chemistry
  • Biochemistry
  • Colloid and Surface Chemistry

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