Abstract
Previous measurements of spontaneous emission from a semiconductor laser have either ignored longitudinal effects while focusing on spectral phenomena or have sacrificed spectral information in favor of resolving longitudinal variations. The authors have, for the first time, obtained a longitudinal carrier density profile by analyzing spontaneous emission spectra measured from the side of a laser cleaved along its length 20 μm from the ridge. Designed for reduced sensitivity to temperature fluctuations and alignment imperfections, the technique is applicable to the study of internal mechanisms, including such effects as spatial hole burning and optical damage, in both Fabry-Perot and DFB lasers.
| Original language | English (US) |
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| Pages | 166 |
| Number of pages | 1 |
| State | Published - 1996 |
| Event | Proceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe - Hamburg, Ger Duration: Sep 8 1996 → Sep 13 1996 |
Conference
| Conference | Proceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe |
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| City | Hamburg, Ger |
| Period | 9/8/96 → 9/13/96 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering