INIS
applications
100%
voltage
100%
magnetic tunnel junctions
100%
anisotropy
66%
randomness
66%
memory devices
33%
spin
22%
magnetization
22%
torque
22%
data
11%
cost
11%
security
11%
information
11%
comparative evaluations
11%
energy
11%
performance
11%
control
11%
manufacturing
11%
retention
11%
solutions
11%
semiconductor materials
11%
density
11%
errors
11%
increasing
11%
scaling
11%
operation
11%
foundries
11%
electric fields
11%
Physics
Electric Potential
100%
Tunnel Junction
100%
Utilization
100%
Memory
77%
Magnetic Anisotropy
66%
Magnetization
22%
Transferring
22%
Spin
22%
Traction
11%
Electric Fields
11%
Semiconductor
11%
Performance
11%
Information
11%
Increasing
11%
Starting
11%
Coefficients
11%
Engineering
Electric Potential
100%
Magnetic Tunnel Junction
100%
Applications
100%
Random Access Memory
44%
Spin Transfer
22%
Random Access Memory Device
22%
Research
22%
Integration
22%
Development
22%
Mechanisms
22%
Electric Field
11%
Error Rate
11%
Gas Fuel Manufacture
11%
Free Field
11%
Semiconductor
11%
Performance
11%
Density
11%
Energy Engineering
11%
Scaling
11%
Switching
11%
Computer Science
Random Access Memory
100%
Application
100%
High-Performance Computing
16%
Energy Efficient
16%
Current-State
16%
Research Question
16%
Potential Solution
16%
Nonvolatile Data
16%
Security Application
16%
Data Retention
16%
Intelligent Computing
16%
Roles
16%
Control
16%
Transitions
16%
Switching
16%
Material Science
Anisotropy
100%
Devices
50%
Torque
33%
Semiconductor Material
16%
Traction
16%
Density
16%