Abstract
We studied the microstructure of {111} planar defects, including stacking faults and nanotwins, in the SrRu03 buffer layer in SrTiO3/SrRuO3 two-layer films on LaAlO3 substrates by means of high-resolution transmission electron microscopy. Most of the defects stop propagation in the buffer layer by mutual intersection with one another as well as by themselves without intersection. Single Frank or Shockley partial dislocations are found at the terminating end of an isolated stacking fault. We show several types of dislocation barrier formed by the intersection of two {111} stacking faults as well as when an extended dislocation changes its gliding-climbing plane. The formation mechanism of the dislocation barriers is discussed on the basis of reactions between the partial dislocations bounding the stacking faults. We also show a {111} nanotwin and its transition to an extrinsic stacking fault by a Frank partial dislocation. The contribution of the planar defects to the strain relaxation in the SrRuO3 buffer layer is discussed.
Original language | English (US) |
---|---|
Pages (from-to) | 65-80 |
Number of pages | 16 |
Journal | Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties |
Volume | 82 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2002 |
Funding
ACKNOWLEDGEMENTS J. S. Wu thanks the Alexander von Humboldt-Stiftung for a research grant. The work at Pennsylvania State is partially supported by the National Science Foundation under grant DMR-9702632 and by the Defense Advanced Research Project Agency FAME Program under contract DABT63-98-1-002.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- General Materials Science
- Condensed Matter Physics
- Physics and Astronomy (miscellaneous)
- Metals and Alloys