Propagation and interaction of {111} planar defects in the SrRuO3buffer layer in SrTiO3/SrRuO3two-layer films on LaAlO3substrates

J. S. Wu*, C. L. Jia, K. Urban, J. H. Hao, X. X. Xi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We studied the microstructure of {111} planar defects, including stacking faults and nanotwins, in the SrRu03 buffer layer in SrTiO3/SrRuO3 two-layer films on LaAlO3 substrates by means of high-resolution transmission electron microscopy. Most of the defects stop propagation in the buffer layer by mutual intersection with one another as well as by themselves without intersection. Single Frank or Shockley partial dislocations are found at the terminating end of an isolated stacking fault. We show several types of dislocation barrier formed by the intersection of two {111} stacking faults as well as when an extended dislocation changes its gliding-climbing plane. The formation mechanism of the dislocation barriers is discussed on the basis of reactions between the partial dislocations bounding the stacking faults. We also show a {111} nanotwin and its transition to an extrinsic stacking fault by a Frank partial dislocation. The contribution of the planar defects to the strain relaxation in the SrRuO3 buffer layer is discussed.

Original languageEnglish (US)
Pages (from-to)65-80
Number of pages16
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume82
Issue number1
DOIs
StatePublished - Jan 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)
  • Metals and Alloys

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