Properties and improved space survivability of POSS (polyhedral oligomeric silsesquioxane) polyimides

Sandra J. Tomczak*, Darreil Marchant, Steve Svejda, Timothy K. Minton, Amy L. Brunsvold, Irina Gouzman, Eitan Grossman, George C Schatz, Diego Troya, Li Peng Sun, Rene I. Gonzalez

*Corresponding author for this work

Research output: Contribution to journalConference article

16 Scopus citations

Abstract

Properties and improved space survivability of polyhedral oligomeric silsesquioxane (POSS) polyimides (PI) were investigated. It was found that the room temperature modulus of polyimide is unaffected by POSS, and the modulus at temperatures greater than the Tg of the polyimide is doubled by the incorporation of the 20 wt% POSS. To simulate lower earth orbit (LEO) conditions, POSS PI films underwent exposure to a hyperthermal oxygen atom beam. The films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy and surface profilometry.

Original languageEnglish (US)
Article numberNN9.1
Pages (from-to)395-406
Number of pages12
JournalMaterials Research Society Symposium Proceedings
Volume851
StatePublished - Aug 25 2005
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2004Dec 3 2004

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Tomczak, S. J., Marchant, D., Svejda, S., Minton, T. K., Brunsvold, A. L., Gouzman, I., Grossman, E., Schatz, G. C., Troya, D., Sun, L. P., & Gonzalez, R. I. (2005). Properties and improved space survivability of POSS (polyhedral oligomeric silsesquioxane) polyimides. Materials Research Society Symposium Proceedings, 851, 395-406. [NN9.1].