Properties of 2D quantum well lasers

J. Nagle*, S. Hersee, M. Razeghi, M. Krakowski, B. de Cremoux, C. Weisbuch

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The lasing characteristics of quantum well and double heterostructure lasers are compared for the GaAs/GaAlAs and GaInAs/InP materials systems. The poorer performance of GaInAs/InP quantum well lasers is shown to be due to carrier heating linked to Auger recombination. However, low-temperature measurements reveal that in other respects these lasers are well behaved.

Original languageEnglish (US)
Pages (from-to)148-154
Number of pages7
JournalSurface Science
Volume174
Issue number1-3
DOIs
StatePublished - Aug 3 1986

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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