Properties of high-jc SINIS junctions

I. P. Nevirkovets; S. E. Shafranjuk; J. B. Ketterson; E. M. Rudenko

doi:10.1109/TASC.2003.814161

Properties of high-j_c SINIS junctions

I. P. Nevirkovets^*, S. E. Shafranjuk, J. B. Ketterson, E. M. Rudenko

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

Nb/Al/AlO_x/Al/AlO_x/Al/Nb junctions with high critical current densities, j_c, above 20 kA/cm² were fabricated and characterized, A critical voltage of V_c = 1.25 mV and small hysteresis (about 6% of the critical current) at 4.2 K were obtained for j_c = 21 kA/cm². Also, devices with a modified geometry, Nb/Al/AlO_x/Al/Nb/Al/AlO_x/Al/Nb, were fabricated. In these devices, j_c ≃ 50 kA/cm² at 4.5 K, and the temperature dependence of the critical current, I_c(T), is improved (as compared with our earlier results) in that the steep raise of I_c is shifted toward higher temperatures. We suggest a theoretical model which satisfactory describes the enhanced critical current for these SINS'NIS junctions as compared with ordinary SINIS junctions.

Original language	English (US)
Pages (from-to)	1085-1088
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	13
Issue number	2 I
DOIs	https://doi.org/10.1109/TASC.2003.814161
State	Published - Jun 2003
Event	2002 Applied Superconductivity Conference - Houston, TX, United States Duration: Aug 4 2002 → Aug 9 2002

Keywords

Josephson effect
SINIS junctions
Superconductivity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/TASC.2003.814161

Cite this

@article{2e57e3b1bcf24c20b44f29e97bd76921,

title = "Properties of high-jc SINIS junctions",

abstract = "Nb/Al/AlOx/Al/AlOx/Al/Nb junctions with high critical current densities, jc, above 20 kA/cm2 were fabricated and characterized, A critical voltage of Vc = 1.25 mV and small hysteresis (about 6% of the critical current) at 4.2 K were obtained for jc = 21 kA/cm2. Also, devices with a modified geometry, Nb/Al/AlOx/Al/Nb/Al/AlOx/Al/Nb, were fabricated. In these devices, jc ≃ 50 kA/cm2 at 4.5 K, and the temperature dependence of the critical current, Ic(T), is improved (as compared with our earlier results) in that the steep raise of Ic is shifted toward higher temperatures. We suggest a theoretical model which satisfactory describes the enhanced critical current for these SINS'NIS junctions as compared with ordinary SINIS junctions.",

keywords = "Josephson effect, SINIS junctions, Superconductivity",

author = "Nevirkovets, {I. P.} and Shafranjuk, {S. E.} and Ketterson, {J. B.} and Rudenko, {E. M.}",

note = "Funding Information: Manuscript received August 4, 2002. This work was supported by the Office of Naval Research under Grant N00014-00-1-0025. I. P. Nevirkovets is with the Department of Physics and Astronomy, North-western University, Evanston, IL 60208 USA, on leave from the Institute for Metal Physics NASU, Kyiv 03680, Ukraine (e-mail: i-nevirkovets@nwu.edu). S. E. Shafranjuk is with the Institute for Magnetism NASU, Kyiv 03680, Ukraine (e-mail: serhii@softhome.net). J. B. Ketterson is with the Department of Physics and Astronomy, Department of Electrical and Computer Engineering, and Materials Research Center, North-western University, Evanston, IL 60208 USA (e-mail: j-ketterson@nwu.edu). E. M. Rudenko is with the Institute for Metal Physics NASU, Kyiv 03680, Ukraine (e-mail: rudenko@imp.kiev.ua). Digital Object Identifier 10.1109/TASC.2003.814161; 2002 Applied Superconductivity Conference ; Conference date: 04-08-2002 Through 09-08-2002",

year = "2003",

month = jun,

doi = "10.1109/TASC.2003.814161",

language = "English (US)",

volume = "13",

pages = "1085--1088",

journal = "IEEE Transactions on Applied Superconductivity",

issn = "1051-8223",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2 I",

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TY - JOUR

T1 - Properties of high-jc SINIS junctions

AU - Nevirkovets, I. P.

AU - Shafranjuk, S. E.

AU - Ketterson, J. B.

AU - Rudenko, E. M.

N1 - Funding Information: Manuscript received August 4, 2002. This work was supported by the Office of Naval Research under Grant N00014-00-1-0025. I. P. Nevirkovets is with the Department of Physics and Astronomy, North-western University, Evanston, IL 60208 USA, on leave from the Institute for Metal Physics NASU, Kyiv 03680, Ukraine (e-mail: i-nevirkovets@nwu.edu). S. E. Shafranjuk is with the Institute for Magnetism NASU, Kyiv 03680, Ukraine (e-mail: serhii@softhome.net). J. B. Ketterson is with the Department of Physics and Astronomy, Department of Electrical and Computer Engineering, and Materials Research Center, North-western University, Evanston, IL 60208 USA (e-mail: j-ketterson@nwu.edu). E. M. Rudenko is with the Institute for Metal Physics NASU, Kyiv 03680, Ukraine (e-mail: rudenko@imp.kiev.ua). Digital Object Identifier 10.1109/TASC.2003.814161

PY - 2003/6

Y1 - 2003/6

N2 - Nb/Al/AlOx/Al/AlOx/Al/Nb junctions with high critical current densities, jc, above 20 kA/cm2 were fabricated and characterized, A critical voltage of Vc = 1.25 mV and small hysteresis (about 6% of the critical current) at 4.2 K were obtained for jc = 21 kA/cm2. Also, devices with a modified geometry, Nb/Al/AlOx/Al/Nb/Al/AlOx/Al/Nb, were fabricated. In these devices, jc ≃ 50 kA/cm2 at 4.5 K, and the temperature dependence of the critical current, Ic(T), is improved (as compared with our earlier results) in that the steep raise of Ic is shifted toward higher temperatures. We suggest a theoretical model which satisfactory describes the enhanced critical current for these SINS'NIS junctions as compared with ordinary SINIS junctions.

AB - Nb/Al/AlOx/Al/AlOx/Al/Nb junctions with high critical current densities, jc, above 20 kA/cm2 were fabricated and characterized, A critical voltage of Vc = 1.25 mV and small hysteresis (about 6% of the critical current) at 4.2 K were obtained for jc = 21 kA/cm2. Also, devices with a modified geometry, Nb/Al/AlOx/Al/Nb/Al/AlOx/Al/Nb, were fabricated. In these devices, jc ≃ 50 kA/cm2 at 4.5 K, and the temperature dependence of the critical current, Ic(T), is improved (as compared with our earlier results) in that the steep raise of Ic is shifted toward higher temperatures. We suggest a theoretical model which satisfactory describes the enhanced critical current for these SINS'NIS junctions as compared with ordinary SINIS junctions.

KW - Josephson effect

KW - SINIS junctions

KW - Superconductivity

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U2 - 10.1109/TASC.2003.814161

DO - 10.1109/TASC.2003.814161

M3 - Conference article

AN - SCOPUS:0042440846

SN - 1051-8223

VL - 13

SP - 1085

EP - 1088

JO - IEEE Transactions on Applied Superconductivity

JF - IEEE Transactions on Applied Superconductivity

IS - 2 I

T2 - 2002 Applied Superconductivity Conference

Y2 - 4 August 2002 through 9 August 2002

ER -