Properties of high-jc SINIS junctions

I. P. Nevirkovets*, S. E. Shafranjuk, J. B. Ketterson, E. M. Rudenko

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations


Nb/Al/AlOx/Al/AlOx/Al/Nb junctions with high critical current densities, jc, above 20 kA/cm2 were fabricated and characterized, A critical voltage of Vc = 1.25 mV and small hysteresis (about 6% of the critical current) at 4.2 K were obtained for jc = 21 kA/cm2. Also, devices with a modified geometry, Nb/Al/AlOx/Al/Nb/Al/AlOx/Al/Nb, were fabricated. In these devices, jc ≃ 50 kA/cm2 at 4.5 K, and the temperature dependence of the critical current, Ic(T), is improved (as compared with our earlier results) in that the steep raise of Ic is shifted toward higher temperatures. We suggest a theoretical model which satisfactory describes the enhanced critical current for these SINS'NIS junctions as compared with ordinary SINIS junctions.

Original languageEnglish (US)
Pages (from-to)1085-1088
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Issue number2 I
StatePublished - Jun 2003
Event2002 Applied Superconductivity Conference - Houston, TX, United States
Duration: Aug 4 2002Aug 9 2002


  • Josephson effect
  • SINIS junctions
  • Superconductivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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