Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3)

D. G. Chtchekine*, L. P. Fu, G. D. Gilliland, Y. Chen, S. E. Ralph, K. K. Bajaj, Y. Bu, M. C. Lin, F. T. Bacalzo, S. R. Stock

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

We have grown high-quality GaN films on sapphire using a new nitrogen precursor, hydrazoic acid (HN3). Films were grown at 600°C on (0001) sapphire substrates in a low-pressure chemical-vapor-deposition system using triethylgallium and hydrazoic acid as precursors. Subsequently, we have conducted a complete study of the surface, structural, electrical, and optical properties of these GaN films, and our early results are very encouraging. All films were of wurtzite crystal structure, slightly polycrystalline, and n type at about 2×10 cm-3. We find the films to be efficient light emitters in the near-band edge region of the spectrum. Analysis of the emission energies and kinetics suggests that the midgap emission results from a superimposed deep-donor-to-shallow-acceptor emission and a deep-donor-to-valence-band emission, where the deep donor consists of a distribution of energy levels, thereby yielding a broad emission band.

Original languageEnglish (US)
Pages (from-to)2197-2207
Number of pages11
JournalJournal of Applied Physics
Volume81
Issue number5
DOIs
StatePublished - Mar 1 1997

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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