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Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3)
D. G. Chtchekine*, L. P. Fu, G. D. Gilliland, Y. Chen, S. E. Ralph, K. K. Bajaj, Y. Bu, M. C. Lin, F. T. Bacalzo, S. R. Stock
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
28
Scopus
citations