Properties of superconducting Nb/AI/Nb/AI-AIOx-AI-AIOx-AI/Nb/AI/Nb tunnel junctions

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2 Scopus citations

Abstract

Modified geometry (MG) devices, Nb/AI/Nb/AI-AIOx-AI-AIOx-AI/Nb/AI/Nb, have been fabricated and investigated in comparison with the basic geometry (BG) double-barrier Nb/AI-A1Ox-AI'-AIOx-AI/Nb devices. The enhancement of the critical temperature in the AI' film is found to be weaker for the MG devices as compared with the BG devices at temperatures near T=4.2 K but stronger at low T. Indication of an enhancement of dc Josephson critical current density, jc, at bias voltage V≠0 as compared with jc(V=0) has been observed in the MG devices for the first time.

Original languageEnglish (US)
Pages (from-to)647-648
Number of pages2
JournalCzechoslovak Journal of Physics
Volume46
Issue numberSUPPL. 2
DOIs
StatePublished - Dec 1 1996
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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