Properties of superconducting Nb/AI/Nb/AI-AIOx-AI-AIOx-AI/Nb/AI/Nb tunnel junctions

I. P. Nevirkovets

doi:10.1007/BF02583631

Properties of superconducting Nb/AI/Nb/AI-AIO_x-AI-AIO_x-AI/Nb/AI/Nb tunnel junctions

I. P. Nevirkovets

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Modified geometry (MG) devices, Nb/AI/Nb/AI-AIO_x-AI-AIO_x-AI/Nb/AI/Nb, have been fabricated and investigated in comparison with the basic geometry (BG) double-barrier Nb/AI-A1O_x-AI'-AIO_x-AI/Nb devices. The enhancement of the critical temperature in the AI' film is found to be weaker for the MG devices as compared with the BG devices at temperatures near T=4.2 K but stronger at low T. Indication of an enhancement of dc Josephson critical current density, j_c, at bias voltage V≠0 as compared with j_c(V=0) has been observed in the MG devices for the first time.

Original language	English (US)
Pages (from-to)	647-648
Number of pages	2
Journal	Czechoslovak Journal of Physics
Volume	46
Issue number	SUPPL. 2
DOIs	https://doi.org/10.1007/BF02583631
State	Published - 1996
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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@article{003effe467c44a4aa8a2443e2266c3a0,

title = "Properties of superconducting Nb/AI/Nb/AI-AIOx-AI-AIOx-AI/Nb/AI/Nb tunnel junctions",

abstract = "Modified geometry (MG) devices, Nb/AI/Nb/AI-AIOx-AI-AIOx-AI/Nb/AI/Nb, have been fabricated and investigated in comparison with the basic geometry (BG) double-barrier Nb/AI-A1Ox-AI'-AIOx-AI/Nb devices. The enhancement of the critical temperature in the AI' film is found to be weaker for the MG devices as compared with the BG devices at temperatures near T=4.2 K but stronger at low T. Indication of an enhancement of dc Josephson critical current density, jc, at bias voltage V≠0 as compared with jc(V=0) has been observed in the MG devices for the first time.",

author = "Nevirkovets, {I. P.}",

year = "1996",

doi = "10.1007/BF02583631",

language = "English (US)",

volume = "46",

pages = "647--648",

journal = "Czechoslovak Journal of Physics",

issn = "0011-4626",

publisher = "Springer Netherlands",

number = "SUPPL. 2",

}

TY - JOUR

T1 - Properties of superconducting Nb/AI/Nb/AI-AIOx-AI-AIOx-AI/Nb/AI/Nb tunnel junctions

AU - Nevirkovets, I. P.

PY - 1996

Y1 - 1996

N2 - Modified geometry (MG) devices, Nb/AI/Nb/AI-AIOx-AI-AIOx-AI/Nb/AI/Nb, have been fabricated and investigated in comparison with the basic geometry (BG) double-barrier Nb/AI-A1Ox-AI'-AIOx-AI/Nb devices. The enhancement of the critical temperature in the AI' film is found to be weaker for the MG devices as compared with the BG devices at temperatures near T=4.2 K but stronger at low T. Indication of an enhancement of dc Josephson critical current density, jc, at bias voltage V≠0 as compared with jc(V=0) has been observed in the MG devices for the first time.

AB - Modified geometry (MG) devices, Nb/AI/Nb/AI-AIOx-AI-AIOx-AI/Nb/AI/Nb, have been fabricated and investigated in comparison with the basic geometry (BG) double-barrier Nb/AI-A1Ox-AI'-AIOx-AI/Nb devices. The enhancement of the critical temperature in the AI' film is found to be weaker for the MG devices as compared with the BG devices at temperatures near T=4.2 K but stronger at low T. Indication of an enhancement of dc Josephson critical current density, jc, at bias voltage V≠0 as compared with jc(V=0) has been observed in the MG devices for the first time.

UR - http://www.scopus.com/inward/record.url?scp=0642294008&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0642294008&partnerID=8YFLogxK

U2 - 10.1007/BF02583631

DO - 10.1007/BF02583631

M3 - Article

AN - SCOPUS:0642294008

SN - 0011-4626

VL - 46

SP - 647

EP - 648

JO - Czechoslovak Journal of Physics

JF - Czechoslovak Journal of Physics

IS - SUPPL. 2

ER -

Properties of superconducting Nb/AI/Nb/AI-AIO_x-AI-AIO_x-AI/Nb/AI/Nb tunnel junctions

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