Abstract
We characterize the performance of a GaN p-i-n photodiode as a nonlinear sensor for second-and third-order femtosecond pulse autocorrelation measurements in the visible and near-infrared regimes, respectively. The two-and three-photon absorption coefficients for GaN are also determined.
Original language | English (US) |
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Pages (from-to) | 3778-3780 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 75 |
Issue number | 24 |
DOIs | |
State | Published - Dec 13 1999 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)