Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions

C. Bayram*, N. Ṕŕ-Laperne, Ryan P McClintock, B. Fain, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

A pulsed metal-organic chemical vapor deposition technique is developed for the growth of high-quality AlN/GaN superlattices (SLs) with intersubband (ISB) transitions at optical communications wavelengths. Tunability of the AlN and GaN layers is demonstrated. Indium is shown to improve SL surface and structural quality. Capping thickness is shown to be crucial for ISB transition characteristics. Effects of barrier- and well-doping on the ISB absorption are reported.

Original languageEnglish (US)
Article number121902
JournalApplied Physics Letters
Volume94
Issue number12
DOIs
StatePublished - Apr 7 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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