Abstract
A pulsed metalorganic chemical vapor deposition (MOCVD) technique, specifically designed for high quality AIN/GaN superlattices (SLs) is introduced. Optical quality and precise controllability over layer thicknesses are investigated. Indium is shown to improve interface and surface quality. An AIN/GaN SL designed for intersubband transition at a telecommunication wavelength of ∼1.5 μm, is grown, and processed for intersubband (ISB) absorption measurements. Room temperature measurements show intersubband absorption centered at 1.49 μm. Minimal (n-type) silicon doping of the well is shown to be crucial for good ISB absorption characteristics. The potential to extend this technology into the far infrared and even the terahertz (THz) region is also discussed.
| Original language | English (US) |
|---|---|
| Article number | 722212 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 7222 |
| DOIs | |
| State | Published - 2009 |
| Event | Quantum Sensing and Nanophotonic Devices VI - San Jose, CA, United States Duration: Jan 25 2009 → Jan 28 2009 |
Keywords
- AIN/GaN superlattice
- Intersubband absorption
- Intersubband transition
- Metalorganic chemical vapor deposition
- Terahertz
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering