Quantitative analysis of electric force microscopy: The role of sample geometry

Emma Tevaarwerk; D. G. Keppel; P. Rugheimer; M. G. Lagally; M. A. Eriksson

doi:10.1063/1.1898183

Quantitative analysis of electric force microscopy: The role of sample geometry

Emma Tevaarwerk^*, D. G. Keppel, P. Rugheimer, M. G. Lagally, M. A. Eriksson

^*Corresponding author for this work

McCormick Office of Undergraduate Engineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Quantitative electric force microscopy (EFM) is usually restricted to flat samples, because vertical sample topography traditionally makes quantitative interpretation of EFM data difficult. Many important samples, including self-assembled nanostructures, possess interesting nanoscale electrical properties in addition to complex topography. Here we present techniques for analysis of EFM images of such samples, using voltage modulated EFM augmented by three-dimensional simulations. We demonstrate the effectiveness of these techniques in analyzing EFM images of self-assembled SiGe nanostructures on insulator, report measured dielectric properties, and discuss the limitations sample topography places on quantitative measurement.

Original language	English (US)
Article number	053707
Journal	Review of Scientific Instruments
Volume	76
Issue number	5
DOIs	https://doi.org/10.1063/1.1898183
State	Published - May 2005

ASJC Scopus subject areas

Instrumentation

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title = "Quantitative analysis of electric force microscopy: The role of sample geometry",

abstract = "Quantitative electric force microscopy (EFM) is usually restricted to flat samples, because vertical sample topography traditionally makes quantitative interpretation of EFM data difficult. Many important samples, including self-assembled nanostructures, possess interesting nanoscale electrical properties in addition to complex topography. Here we present techniques for analysis of EFM images of such samples, using voltage modulated EFM augmented by three-dimensional simulations. We demonstrate the effectiveness of these techniques in analyzing EFM images of self-assembled SiGe nanostructures on insulator, report measured dielectric properties, and discuss the limitations sample topography places on quantitative measurement.",

author = "Emma Tevaarwerk and Keppel, {D. G.} and P. Rugheimer and Lagally, {M. G.} and Eriksson, {M. A.}",

note = "Funding Information: This material is based upon work supported by the DOE under Grant No. DE-FG02-03ER46028, by the NSF under Grant No. DMR-0094063, DMR-0079983 and by the Research Corporation.",

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AU - Tevaarwerk, Emma

AU - Keppel, D. G.

AU - Rugheimer, P.

AU - Lagally, M. G.

AU - Eriksson, M. A.

N1 - Funding Information: This material is based upon work supported by the DOE under Grant No. DE-FG02-03ER46028, by the NSF under Grant No. DMR-0094063, DMR-0079983 and by the Research Corporation.

PY - 2005/5

Y1 - 2005/5

N2 - Quantitative electric force microscopy (EFM) is usually restricted to flat samples, because vertical sample topography traditionally makes quantitative interpretation of EFM data difficult. Many important samples, including self-assembled nanostructures, possess interesting nanoscale electrical properties in addition to complex topography. Here we present techniques for analysis of EFM images of such samples, using voltage modulated EFM augmented by three-dimensional simulations. We demonstrate the effectiveness of these techniques in analyzing EFM images of self-assembled SiGe nanostructures on insulator, report measured dielectric properties, and discuss the limitations sample topography places on quantitative measurement.

AB - Quantitative electric force microscopy (EFM) is usually restricted to flat samples, because vertical sample topography traditionally makes quantitative interpretation of EFM data difficult. Many important samples, including self-assembled nanostructures, possess interesting nanoscale electrical properties in addition to complex topography. Here we present techniques for analysis of EFM images of such samples, using voltage modulated EFM augmented by three-dimensional simulations. We demonstrate the effectiveness of these techniques in analyzing EFM images of self-assembled SiGe nanostructures on insulator, report measured dielectric properties, and discuss the limitations sample topography places on quantitative measurement.

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Quantitative analysis of electric force microscopy: The role of sample geometry

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