Quantitative analysis of electric force microscopy: The role of sample geometry

Emma Tevaarwerk*, D. G. Keppel, P. Rugheimer, M. G. Lagally, M. A. Eriksson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations


Quantitative electric force microscopy (EFM) is usually restricted to flat samples, because vertical sample topography traditionally makes quantitative interpretation of EFM data difficult. Many important samples, including self-assembled nanostructures, possess interesting nanoscale electrical properties in addition to complex topography. Here we present techniques for analysis of EFM images of such samples, using voltage modulated EFM augmented by three-dimensional simulations. We demonstrate the effectiveness of these techniques in analyzing EFM images of self-assembled SiGe nanostructures on insulator, report measured dielectric properties, and discuss the limitations sample topography places on quantitative measurement.

Original languageEnglish (US)
Article number053707
JournalReview of Scientific Instruments
Issue number5
StatePublished - May 2005

ASJC Scopus subject areas

  • Instrumentation


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