Quantitative HREM analysis of planar defects in high-pressure synthesized infinite-layer superconductor

Hong Zhang*, L. D. Marks, Y. Y. Wang, H. Zhang, V. P. Dravid, P. Han, D. A. Payne

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

The atomic structure of planar defects in infinite layer superconductors prepared by high-pressure synthesis was studied in an effort to explain the relationship between such defects and high-temperature superconductivity. High resolution electron microscopy (HREM) was used to obtain images of the defects which were subsequently analyzed using the NUMIS simulation software. The results of the experimental and computational procedures are presented.

Original languageEnglish (US)
Pages720-721
Number of pages2
StatePublished - 1994
EventProceedings of the 52nd Annual Meeting of the Microscopy Society of America - New Orleans, LA, USA
Duration: Jul 31 1994Aug 5 1994

Other

OtherProceedings of the 52nd Annual Meeting of the Microscopy Society of America
CityNew Orleans, LA, USA
Period7/31/948/5/94

ASJC Scopus subject areas

  • Engineering(all)

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