Quantitative measurement of the electron and hole mobility-lifetime products in semiconductor nanowires

Yi Gu, John P. Romankiewicz, John K. David, Jessica L. Lensch, Lincoln J. Lauhon*

*Corresponding author for this work

Research output: Contribution to journalArticle

84 Scopus citations

Abstract

The mobility-lifetime products (μτ) for electrons and holes in CdS nanowires were quantitatively determined by scanning photocurrent microscopy of devices with ohmic contacts. Ohmic contacts were fabricated by ion bombardment of the contact regions. By analyzing the spatial profiles of the local photoconductivity maps, we determined that electron transport (μ eτ e ≈ 5 × 10 -7 cm 2/V) was more efficient than hole transport (μ hτ h ≈ 10 -7 cm 2/V). The results demonstrate that photocurrent mapping can provide quantitative insight into intrinsic carrier transport properties of semiconductor nanostructures.

Original languageEnglish (US)
Pages (from-to)948-952
Number of pages5
JournalNano letters
Volume6
Issue number5
DOIs
StatePublished - May 1 2006

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Quantitative measurement of the electron and hole mobility-lifetime products in semiconductor nanowires'. Together they form a unique fingerprint.

Cite this