Quantitative thermal imaging of single-walled carbon nanotube devices by scanning Joule expansion microscopy

Xu Xie, Kyle L. Grosse, Jizhou Song, Chaofeng Lu, Simon Dunham, Frank Du, Ahmad E. Islam, Yuhang Li, Yihui Zhang, Eric Pop, Yonggang Huang, William P. King*, John A. Rogers

*Corresponding author for this work

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Electrical generation of heat in single-walled carbon nanotubes (SWNTs) and subsequent thermal transport into the surroundings can critically affect the design, operation, and reliability of electronic and optoelectronic devices based on these materials. Here we investigate such heat generation and transport characteristics in perfectly aligned, horizontal arrays of SWNTs integrated into transistor structures. We present quantitative assessments of local thermometry at individual SWNTs in these arrays, evaluated using scanning Joule expansion microscopy. Measurements at different applied voltages reveal electronic behaviors, including metallic and semiconducting responses, spatial variations in diameter or chirality, and localized defect sites. Analytical models, validated by measurements performed on different device structures at various conditions, enable accurate, quantitative extraction of temperature distributions at the level of individual SWNTs. Using current equipment, the spatial resolution and temperature precision are as good as ∼100 nm and ∼0.7 K, respectively.

Original languageEnglish (US)
Pages (from-to)10267-10275
Number of pages9
JournalACS nano
Volume6
Issue number11
DOIs
StatePublished - Nov 27 2012

Fingerprint

Infrared imaging
Single-walled carbon nanotubes (SWCN)
Microscopic examination
carbon nanotubes
microscopy
Scanning
expansion
scanning
Chirality
heat generation
Heat generation
optoelectronic devices
chirality
electronics
Optoelectronic devices
temperature measurement
Analytical models
Transistors
Temperature distribution
temperature distribution

Keywords

  • chirality change
  • defect
  • heat generation
  • resolution
  • scanning Joule expansion microscopy
  • single-walled carbon nanotube
  • temperature distribution
  • thermal expansion

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Xie, Xu ; Grosse, Kyle L. ; Song, Jizhou ; Lu, Chaofeng ; Dunham, Simon ; Du, Frank ; Islam, Ahmad E. ; Li, Yuhang ; Zhang, Yihui ; Pop, Eric ; Huang, Yonggang ; King, William P. ; Rogers, John A. / Quantitative thermal imaging of single-walled carbon nanotube devices by scanning Joule expansion microscopy. In: ACS nano. 2012 ; Vol. 6, No. 11. pp. 10267-10275.
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Xie, X, Grosse, KL, Song, J, Lu, C, Dunham, S, Du, F, Islam, AE, Li, Y, Zhang, Y, Pop, E, Huang, Y, King, WP & Rogers, JA 2012, 'Quantitative thermal imaging of single-walled carbon nanotube devices by scanning Joule expansion microscopy', ACS nano, vol. 6, no. 11, pp. 10267-10275. https://doi.org/10.1021/nn304083a

Quantitative thermal imaging of single-walled carbon nanotube devices by scanning Joule expansion microscopy. / Xie, Xu; Grosse, Kyle L.; Song, Jizhou; Lu, Chaofeng; Dunham, Simon; Du, Frank; Islam, Ahmad E.; Li, Yuhang; Zhang, Yihui; Pop, Eric; Huang, Yonggang; King, William P.; Rogers, John A.

In: ACS nano, Vol. 6, No. 11, 27.11.2012, p. 10267-10275.

Research output: Contribution to journalArticle

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AU - Xie, Xu

AU - Grosse, Kyle L.

AU - Song, Jizhou

AU - Lu, Chaofeng

AU - Dunham, Simon

AU - Du, Frank

AU - Islam, Ahmad E.

AU - Li, Yuhang

AU - Zhang, Yihui

AU - Pop, Eric

AU - Huang, Yonggang

AU - King, William P.

AU - Rogers, John A.

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N2 - Electrical generation of heat in single-walled carbon nanotubes (SWNTs) and subsequent thermal transport into the surroundings can critically affect the design, operation, and reliability of electronic and optoelectronic devices based on these materials. Here we investigate such heat generation and transport characteristics in perfectly aligned, horizontal arrays of SWNTs integrated into transistor structures. We present quantitative assessments of local thermometry at individual SWNTs in these arrays, evaluated using scanning Joule expansion microscopy. Measurements at different applied voltages reveal electronic behaviors, including metallic and semiconducting responses, spatial variations in diameter or chirality, and localized defect sites. Analytical models, validated by measurements performed on different device structures at various conditions, enable accurate, quantitative extraction of temperature distributions at the level of individual SWNTs. Using current equipment, the spatial resolution and temperature precision are as good as ∼100 nm and ∼0.7 K, respectively.

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