Quantum and classical lifetimes in a Ga0.49In 0.51P/GaAs heterojunction

S. Ben Amor; L. Dmowski; J. C. Portal; K. P. Martin; R. J. Higgins; M. Razeghi

doi:10.1063/1.103732

Quantum and classical lifetimes in a Ga_0.49In _0.51P/GaAs heterojunction

S. Ben Amor^*, L. Dmowski, J. C. Portal, K. P. Martin, R. J. Higgins, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We report a study of the subband structure of Ga_0.49In _0.51P/GaAs heterojunctions. High-field (0<B<20 T) magnetotransport measurements were performed at low temperatures (4.2 K) under hydrostatic pressure (P<12 kbar). The strong persistent photoconductivity effect in this system allowed us to tune the two-dimensional electron gas (2DEG) density (N_2D) with short light bursts from a red electroluminescent diode. The pressure dependence of N_2D shows that in contrast with other systems, pressure effects on the band discontinuity and the effective mass are responsible for the observed density dependence. Both single particle (quantum) and scattering (classical) lifetimes were measured. The ratio of the classical-to-quantum lifetimes was large (≊10) at ambient pressure and confirmed the dominant role of scattering by remote ionized impurities. After illumination, the ratio quickly decreases with increasing 2DEG density. However when pressure is applied, this ratio decreases with decreasing N_2D, giving evidence of a pressure-induced misfit strain at the interface that modifies the dominant scattering mechanisms.

Original language	English (US)
Pages (from-to)	2925-2927
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	27
DOIs	https://doi.org/10.1063/1.103732
State	Published - 1990

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Physics and Astronomy (miscellaneous)

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10.1063/1.103732

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title = "Quantum and classical lifetimes in a Ga0.49In 0.51P/GaAs heterojunction",

abstract = "We report a study of the subband structure of Ga0.49In 0.51P/GaAs heterojunctions. High-field (02D) with short light bursts from a red electroluminescent diode. The pressure dependence of N2D shows that in contrast with other systems, pressure effects on the band discontinuity and the effective mass are responsible for the observed density dependence. Both single particle (quantum) and scattering (classical) lifetimes were measured. The ratio of the classical-to-quantum lifetimes was large (≊10) at ambient pressure and confirmed the dominant role of scattering by remote ionized impurities. After illumination, the ratio quickly decreases with increasing 2DEG density. However when pressure is applied, this ratio decreases with decreasing N2D, giving evidence of a pressure-induced misfit strain at the interface that modifies the dominant scattering mechanisms.",

author = "{Ben Amor}, S. and L. Dmowski and Portal, {J. C.} and Martin, {K. P.} and Higgins, {R. J.} and M. Razeghi",

year = "1990",

doi = "10.1063/1.103732",

language = "English (US)",

volume = "57",

pages = "2925--2927",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Quantum and classical lifetimes in a Ga0.49In 0.51P/GaAs heterojunction

AU - Ben Amor, S.

AU - Dmowski, L.

AU - Portal, J. C.

AU - Martin, K. P.

AU - Higgins, R. J.

AU - Razeghi, M.

PY - 1990

Y1 - 1990

N2 - We report a study of the subband structure of Ga0.49In 0.51P/GaAs heterojunctions. High-field (02D) with short light bursts from a red electroluminescent diode. The pressure dependence of N2D shows that in contrast with other systems, pressure effects on the band discontinuity and the effective mass are responsible for the observed density dependence. Both single particle (quantum) and scattering (classical) lifetimes were measured. The ratio of the classical-to-quantum lifetimes was large (≊10) at ambient pressure and confirmed the dominant role of scattering by remote ionized impurities. After illumination, the ratio quickly decreases with increasing 2DEG density. However when pressure is applied, this ratio decreases with decreasing N2D, giving evidence of a pressure-induced misfit strain at the interface that modifies the dominant scattering mechanisms.

AB - We report a study of the subband structure of Ga0.49In 0.51P/GaAs heterojunctions. High-field (02D) with short light bursts from a red electroluminescent diode. The pressure dependence of N2D shows that in contrast with other systems, pressure effects on the band discontinuity and the effective mass are responsible for the observed density dependence. Both single particle (quantum) and scattering (classical) lifetimes were measured. The ratio of the classical-to-quantum lifetimes was large (≊10) at ambient pressure and confirmed the dominant role of scattering by remote ionized impurities. After illumination, the ratio quickly decreases with increasing 2DEG density. However when pressure is applied, this ratio decreases with decreasing N2D, giving evidence of a pressure-induced misfit strain at the interface that modifies the dominant scattering mechanisms.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 27

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Quantum and classical lifetimes in a Ga_0.49In _0.51P/GaAs heterojunction

Abstract

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