Quantum confinement effects in transferrable silicon nanomembranes and their applications on unusual substrates

Houk Jang, Wonho Lee, Sang M. Won, Seoung Yoon Ryu, Donghun Lee, Jae Bon Koo, Seong Deok Ahn, Cheol Woong Yang, Moon Ho Jo, Jeong Ho Cho, John A. Rogers*, Jong Hyun Ahn

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Scopus citations


Two dimensional (2D) semiconductors have attracted attention for a range of electronic applications, such as transparent, flexible field effect transistors and sensors owing to their good optical transparency and mechanical flexibility. Efforts to exploit 2D semiconductors in electronics are hampered, however, by the lack of efficient methods for their synthesis at levels of quality, uniformity, and reliability needed for practical applications. Here, as an alternative 2D semiconductor, we study single crystal Si nanomembranes (NMs), formed in large area sheets with precisely defined thicknesses ranging from 1.4 to 10 nm. These Si NMs exhibit electronic properties of two-dimensional quantum wells and offer exceptionally high optical transparency and low flexural rigidity. Deterministic assembly techniques allow integration of these materials into unusual device architectures, including field effect transistors with total thicknesses of less than 12 nm, for potential use in transparent, flexible, and stretchable forms of electronics.

Original languageEnglish (US)
Pages (from-to)5600-5607
Number of pages8
JournalNano letters
Issue number11
StatePublished - Nov 13 2013


  • Two-dimensional material
  • flexible electronics
  • graphene
  • quantum confinement
  • single-crystal silicon
  • transparent transistor

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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