Abstract
Modern band structure engineering is based both on the important discoveries of the past century and modern epitaxial technology. The general goal is to control the behavior of charge carriers on an atomic scale, which affects how they interact with each other and their environment. Starting from the basic semiconductor heterostructure, band structure engineering has evolved into a powerful discipline, employing lower dimensionality to demonstrate new material properties. Several modern technologies under development are used as examples of how this discipline is enabling new types of devices and new functionality in areas with immediate application.
Original language | English (US) |
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Pages (from-to) | 2343-2371 |
Number of pages | 29 |
Journal | Modern Physics Letters B |
Volume | 22 |
Issue number | 24 |
DOIs | |
State | Published - Sep 20 2008 |
Keywords
- Band structure engineering
- III-N semiconductors
- III-V semiconductors
- Infrared detectors
- Infrared lasers
- Solid-state physics
ASJC Scopus subject areas
- Statistical and Nonlinear Physics
- Condensed Matter Physics