Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays

S. Tsao*, T. Yamanaka, S. Abdollahi Pour, I. K. Park, B. Movaghar, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


InAs quantum dots embedded in InGaAs quantum wells with InAlAs barriers on InP substrate grown by metalorganic chemical vapor deposition are utilized for high operating temperature detectors and focal plane arrays in the middle wavelength infrared. This dot-well combination is unique because the small band offset between the InAs dots and the InGaAs well leads to weak dot confinement of carriers. As a result, the device behavior differs significantly from that in the more common dot systems that have stronger confinement. Here, we present energy level modeling of our QD-QW system and apply these results to interpret the detector behavior. Detectors showed high performance with D * over 10 10 cmHz 1/2/W at 150 K operating temperature and with high quantum efficiency over 50%. Focal plane arrays have been demonstrated operating at high temperature due to the low dark current observed in these devices.

Original languageEnglish (US)
Article number72240V
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 2009
EventQuantum Dots, Particles, and Nanoclusters VI - San Jose, CA, United States
Duration: Jan 25 2009Jan 28 2009


  • Focal plane array
  • Infrared
  • Inp
  • Photodetector
  • Quantum dot

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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