Quantum-dot infrared photodetectors and focal plane arrays

Manijeh Razeghi*, Ho Chul Lim, Stanley Tsao, Maho Taguchi, Wei Zhang, Alain Andre Quivy

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We report our recent results about mid-wavelength infrared quantum-dot infrared photodetectors (QDIPs) grown by low-pressure metalorganic chemical vapor deposition. A very high responsivity and a very low dark current were obtained. A high peak detectivity of the order of 3×10 12 Jones was achieved at 77 K. The temperature dependent device performance was also investigated. The improved temperature insensitivity compared to QWIPs was attributed to the properties of quantum dots. The device showed a background limited performance temperature of 220 K with a 45° field of view and 300K background. The current device problems are a low quantum efficiency and a stronger than expected performance degradation as a function of operating temperature. Possible ways to improve the quantum efficiency and operating temperature are discussed.

Original languageEnglish (US)
Title of host publicationInfrared Technology and Applications XXXII
DOIs
StatePublished - 2006
EventInfrared Technology and Applications XXXII - Kissimmee, FL, United States
Duration: Apr 17 2006Apr 21 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6206 I
ISSN (Print)0277-786X

Other

OtherInfrared Technology and Applications XXXII
CountryUnited States
CityKissimmee, FL
Period4/17/064/21/06

Keywords

  • Detector
  • Focal plane array
  • Infrared
  • MOCVD
  • Quantum dot

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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