Quantum dot intersubband photodetectors

C. Jelen*, M. Erdtmann, S. Kim, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Quantum dots are recognized as very promising candidates for the fabrication of intersubband photodetectors in the infrared spectral range. At present, material quality is making rapid progress and some devices have been demonstrated. Examples of mid-infrared quantum dot intersubband photodetectors are presented along with device design and data analysis. Nonetheless, the performance of these devices remains less than comparable quantum well intersubband photodetectors due to difficulties in controlling the quantum dot size and distribution during epitaxy.

Original languageEnglish (US)
Pages (from-to)141-150
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4288
DOIs
StatePublished - Jan 1 2001
EventPhotodetectors: Materials and Devices VI - San Jose, CA, United States
Duration: Jan 22 2001Jan 24 2001

Keywords

  • Intersubband photodetectors
  • Nanostructures
  • Quantum dots
  • QWIP
  • Self-assembled photodetectors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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