Abstract
Quantum dots are recognized as very promising candidates for the fabrication of intersubband photodetectors in the infrared spectral range. At present, material quality is making rapid progress and some devices have been demonstrated. Examples of mid-infrared quantum dot intersubband photodetectors are presented along with device design and data analysis. Nonetheless, the performance of these devices remains less than comparable quantum well intersubband photodetectors due to difficulties in controlling the quantum dot size and distribution during epitaxy.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 141-150 |
| Number of pages | 10 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 4288 |
| DOIs | |
| State | Published - 2001 |
| Event | Photodetectors: Materials and Devices VI - San Jose, CA, United States Duration: Jan 22 2001 → Jan 24 2001 |
Keywords
- Intersubband photodetectors
- Nanostructures
- QWIP
- Quantum dots
- Self-assembled photodetectors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering