The fabrication techniques of quantum dots can be categorized into "top-down" methods using lithography and etching and "bottom-up" methods utilizing self-assembly. This chapter describes few of the infrared detector metrics. There are two types of quantum efficiency (QE): external QE (also sometimes called conversion efficiency) and internal QE. The high operating temperature capability of quantum dot infrared detectors (QDIPs) comes from two quantum dot-related effects: low dark current and high photoelectric gain. The chapter looks more closely at the Stranski-Krastanow (SK) growth mode, which is also referred to as quantum dot fabrication by self-assembly. mid-wavelength infrared (MWIR) and low-WIR (LWIR) QDIPs based on the InAs/GaAs system have been reported by several groups. These QDIP structures were usually grown by self-assembled method via molecular beam epitaxy (MBE) technique. The synthesis of colloidal quantum dots (CQD) is based on a three-component system composed of precursors, organic surfactants, and solvents.
- Colloidal quantum dots (CQD)
- InAs/GaAs system
- Molecular beam epitaxy (MBE) technique
- Quantum dot infrared detectors (QDIPs)
- Quantum efficiency (QE)
ASJC Scopus subject areas
- Physics and Astronomy(all)