Quantum Dots

Stanley Tsao*, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Scopus citations

Abstract

The fabrication techniques of quantum dots can be categorized into "top-down" methods using lithography and etching and "bottom-up" methods utilizing self-assembly. This chapter describes few of the infrared detector metrics. There are two types of quantum efficiency (QE): external QE (also sometimes called conversion efficiency) and internal QE. The high operating temperature capability of quantum dot infrared detectors (QDIPs) comes from two quantum dot-related effects: low dark current and high photoelectric gain. The chapter looks more closely at the Stranski-Krastanow (SK) growth mode, which is also referred to as quantum dot fabrication by self-assembly. mid-wavelength infrared (MWIR) and low-WIR (LWIR) QDIPs based on the InAs/GaAs system have been reported by several groups. These QDIP structures were usually grown by self-assembled method via molecular beam epitaxy (MBE) technique. The synthesis of colloidal quantum dots (CQD) is based on a three-component system composed of precursors, organic surfactants, and solvents.

Original languageEnglish (US)
Title of host publicationNanophotonic structures and materials
Publisherwiley
Pages169-219
Number of pages51
Volume2
ISBN (Electronic)9781119011750
ISBN (Print)9781118225516
DOIs
StatePublished - Jan 30 2015

Keywords

  • Colloidal quantum dots (CQD)
  • InAs/GaAs system
  • Molecular beam epitaxy (MBE) technique
  • Quantum dot infrared detectors (QDIPs)
  • Quantum efficiency (QE)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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