Quantum hall effect and hopping conduction in InxGa1-xAs-InP heterojunctions at low temperature

Y. Guldner; J. P. Hirtz; A. Briggs; J. P. Vieren; M. Voos; M. Razeghi

doi:10.1016/0039-6028(84)90303-0

Quantum hall effect and hopping conduction in In_xGa_1-xAs-InP heterojunctions at low temperature

Y. Guldner^*, J. P. Hirtz, A. Briggs, J. P. Vieren, M. Voos, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report investigations of the temperature dependence of the quantum Hall effect in modulation doped In_xGa_1-xAs-InP heterojunctions. The diagonal conductivity σ_xx is studied at several minima of the magneto-resistance ρ{variant}_xx between 50 mK and 2 K. A hopping conduction mechanism is observed when the Fermi level is in the tail of the Landau levels.

Original language	English (US)
Pages (from-to)	179-181
Number of pages	3
Journal	Surface Science
Volume	142
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(84)90303-0
State	Published - Jul 1 1984

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(84)90303-0

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title = "Quantum hall effect and hopping conduction in InxGa1-xAs-InP heterojunctions at low temperature",

abstract = "We report investigations of the temperature dependence of the quantum Hall effect in modulation doped InxGa1-xAs-InP heterojunctions. The diagonal conductivity σxx is studied at several minima of the magneto-resistance ρ{variant}xx between 50 mK and 2 K. A hopping conduction mechanism is observed when the Fermi level is in the tail of the Landau levels.",

author = "Y. Guldner and Hirtz, {J. P.} and A. Briggs and Vieren, {J. P.} and M. Voos and M. Razeghi",

year = "1984",

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doi = "10.1016/0039-6028(84)90303-0",

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T1 - Quantum hall effect and hopping conduction in InxGa1-xAs-InP heterojunctions at low temperature

AU - Guldner, Y.

AU - Hirtz, J. P.

AU - Briggs, A.

AU - Vieren, J. P.

AU - Voos, M.

AU - Razeghi, M.

PY - 1984/7/1

Y1 - 1984/7/1

N2 - We report investigations of the temperature dependence of the quantum Hall effect in modulation doped InxGa1-xAs-InP heterojunctions. The diagonal conductivity σxx is studied at several minima of the magneto-resistance ρ{variant}xx between 50 mK and 2 K. A hopping conduction mechanism is observed when the Fermi level is in the tail of the Landau levels.

AB - We report investigations of the temperature dependence of the quantum Hall effect in modulation doped InxGa1-xAs-InP heterojunctions. The diagonal conductivity σxx is studied at several minima of the magneto-resistance ρ{variant}xx between 50 mK and 2 K. A hopping conduction mechanism is observed when the Fermi level is in the tail of the Landau levels.

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U2 - 10.1016/0039-6028(84)90303-0

DO - 10.1016/0039-6028(84)90303-0

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SP - 179

EP - 181

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Quantum hall effect and hopping conduction in In_xGa_1-xAs-InP heterojunctions at low temperature

Abstract

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