Quantum hall effect and hopping conduction in InxGa1-xAs-InP heterojunctions at low temperature

Y. Guldner*, J. P. Hirtz, A. Briggs, J. P. Vieren, M. Voos, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We report investigations of the temperature dependence of the quantum Hall effect in modulation doped InxGa1-xAs-InP heterojunctions. The diagonal conductivity σxx is studied at several minima of the magneto-resistance ρ{variant}xx between 50 mK and 2 K. A hopping conduction mechanism is observed when the Fermi level is in the tail of the Landau levels.

Original languageEnglish (US)
Pages (from-to)179-181
Number of pages3
JournalSurface Science
Issue number1-3
StatePublished - Jul 1 1984

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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