Quantum Hall effect in a two-dimensional electron system bent by 90°

M. Grayson*, D. Schuh, M. Bichler, M. Huber, G. Abstreiter, L. Hoeppel, J. Smet, K. Von Klitzing

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

19 Scopus citations

Abstract

Using a new MBE growth technique, we fabricate a two-dimensional electron system which is bent around an atomically sharp 90° corner. In the quantum Hall regime under tilted magnetic fields, we can measure equilibration between both co- and counter-propagating edge channels of arbitrary filling factor ratio. We present here 4-point magnetotransport characterization of the corner junction with unequal filling factor combinations which can all be explained using the standard Landauer-Büttiker edge channel picture. The success of this description confirms the realization of the first non-planar quantum Hall edge geometry.

Original languageEnglish (US)
Pages (from-to)181-184
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume22
Issue number1-3
DOIs
StatePublished - Apr 2004
Event15th International Conference on ELectronic Propreties - Nara, Japan
Duration: Jul 14 2003Jul 18 2003

Keywords

  • Bent quantum well
  • Co-propagating
  • Counter-propagating
  • Edge states
  • Quantum Hall effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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