Quantum Hall effect in In0.53Ga0.47As-InP heterojunctions with two populated electric subbands

Y. Guldner*, J. P. Vieren, M. Voos, F. Delahaye, D. Dominguez, J. P. Hirtz, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

43 Scopus citations

Abstract

Quantum-Hall-effect and Shubnikov-de Haas measurements are presented for InxGa1-xAs?(hyInP heterojunctions with two populated electric subbands and low electron density (ns≤5×1011 cm-2). The Shubnikov-de Haas oscillations clearly show two different periodicities. An anomalous behavior of the quantum Hall effect is observed, in particular some plateaus are missing and other plateaus are enhanced. Precise measurements of the Hall resistance have been performed and it is shown that the resistance of the i=2 plateau is equal to its theoretical value h/2e2 with an uncertainty of ∼10-8.. AE

Original languageEnglish (US)
Pages (from-to)3990-3993
Number of pages4
JournalPhysical Review B
Volume33
Issue number6
DOIs
StatePublished - Jan 1 1986

ASJC Scopus subject areas

  • Condensed Matter Physics

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