Quantum Hall effect in In0.53Ga0.47As-InP heterojunctions with two populated electric subbands

Y. Guldner; J. P. Vieren; M. Voos; F. Delahaye; D. Dominguez; J. P. Hirtz; M. Razeghi

doi:10.1103/PhysRevB.33.3990

Quantum Hall effect in In0.53Ga0.47As-InP heterojunctions with two populated electric subbands

Y. Guldner^*, J. P. Vieren, M. Voos, F. Delahaye, D. Dominguez, J. P. Hirtz, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

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43 Scopus citations

Abstract

Quantum-Hall-effect and Shubnikov-de Haas measurements are presented for InxGa1-xAs?(hyInP heterojunctions with two populated electric subbands and low electron density (ns≤5×1011 cm-2). The Shubnikov-de Haas oscillations clearly show two different periodicities. An anomalous behavior of the quantum Hall effect is observed, in particular some plateaus are missing and other plateaus are enhanced. Precise measurements of the Hall resistance have been performed and it is shown that the resistance of the i=2 plateau is equal to its theoretical value h/2e2 with an uncertainty of ∼10-8.. AE

Original language	English (US)
Pages (from-to)	3990-3993
Number of pages	4
Journal	Physical Review B
Volume	33
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevB.33.3990
State	Published - 1986

ASJC Scopus subject areas

Condensed Matter Physics

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title = "Quantum Hall effect in In0.53Ga0.47As-InP heterojunctions with two populated electric subbands",

abstract = "Quantum-Hall-effect and Shubnikov-de Haas measurements are presented for InxGa1-xAs?(hyInP heterojunctions with two populated electric subbands and low electron density (ns≤5×1011 cm-2). The Shubnikov-de Haas oscillations clearly show two different periodicities. An anomalous behavior of the quantum Hall effect is observed, in particular some plateaus are missing and other plateaus are enhanced. Precise measurements of the Hall resistance have been performed and it is shown that the resistance of the i=2 plateau is equal to its theoretical value h/2e2 with an uncertainty of ∼10-8.. AE",

author = "Y. Guldner and Vieren, {J. P.} and M. Voos and F. Delahaye and D. Dominguez and Hirtz, {J. P.} and M. Razeghi",

year = "1986",

doi = "10.1103/PhysRevB.33.3990",

language = "English (US)",

volume = "33",

pages = "3990--3993",

journal = "Physical Review B",

issn = "0163-1829",

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T1 - Quantum Hall effect in In0.53Ga0.47As-InP heterojunctions with two populated electric subbands

AU - Guldner, Y.

AU - Vieren, J. P.

AU - Voos, M.

AU - Delahaye, F.

AU - Dominguez, D.

AU - Hirtz, J. P.

AU - Razeghi, M.

PY - 1986

Y1 - 1986

N2 - Quantum-Hall-effect and Shubnikov-de Haas measurements are presented for InxGa1-xAs?(hyInP heterojunctions with two populated electric subbands and low electron density (ns≤5×1011 cm-2). The Shubnikov-de Haas oscillations clearly show two different periodicities. An anomalous behavior of the quantum Hall effect is observed, in particular some plateaus are missing and other plateaus are enhanced. Precise measurements of the Hall resistance have been performed and it is shown that the resistance of the i=2 plateau is equal to its theoretical value h/2e2 with an uncertainty of ∼10-8.. AE

AB - Quantum-Hall-effect and Shubnikov-de Haas measurements are presented for InxGa1-xAs?(hyInP heterojunctions with two populated electric subbands and low electron density (ns≤5×1011 cm-2). The Shubnikov-de Haas oscillations clearly show two different periodicities. An anomalous behavior of the quantum Hall effect is observed, in particular some plateaus are missing and other plateaus are enhanced. Precise measurements of the Hall resistance have been performed and it is shown that the resistance of the i=2 plateau is equal to its theoretical value h/2e2 with an uncertainty of ∼10-8.. AE

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JO - Physical Review B

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Quantum Hall effect in In0.53Ga0.47As-InP heterojunctions with two populated electric subbands

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