Quantum oscillations at a Ga0.47In0.53AsInP heterojunction interface

R. J. Nicholas*, M. A. Brummell, J. C. Portal, M. Razeghi, M. A. Poisson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

We report the observation of a two dimensional gas of high mobility electrons at the interface of a Ga0.47In0.53AsInP heterojunction grown by MOCVD. The two dimensional electron concentrations and effective mass are determined by Shubnikov-de Haas studies, and compared with theoretical predictions. Evidence of an enhancement of the g-factor is observed. We also report observations of very pronounced quantum Hall steps as seen in GaAs-GaAlAs heterojunctions.

Original languageEnglish (US)
Pages (from-to)825-828
Number of pages4
JournalSolid State Communications
Volume43
Issue number11
DOIs
StatePublished - Sep 1982

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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