Quantum oscillations at a Ga0.47In0.53AsInP heterojunction interface

R. J. Nicholas; M. A. Brummell; J. C. Portal; M. Razeghi; M. A. Poisson

doi:10.1016/0038-1098(82)90848-1

Quantum oscillations at a Ga_0.47In_0.53AsInP heterojunction interface

R. J. Nicholas^*, M. A. Brummell, J. C. Portal, M. Razeghi, M. A. Poisson

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

We report the observation of a two dimensional gas of high mobility electrons at the interface of a Ga_0.47In_0.53AsInP heterojunction grown by MOCVD. The two dimensional electron concentrations and effective mass are determined by Shubnikov-de Haas studies, and compared with theoretical predictions. Evidence of an enhancement of the g-factor is observed. We also report observations of very pronounced quantum Hall steps as seen in GaAs-GaAlAs heterojunctions.

Original language	English (US)
Pages (from-to)	825-828
Number of pages	4
Journal	Solid State Communications
Volume	43
Issue number	11
DOIs	https://doi.org/10.1016/0038-1098(82)90848-1
State	Published - Sep 1982

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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title = "Quantum oscillations at a Ga0.47In0.53AsInP heterojunction interface",

abstract = "We report the observation of a two dimensional gas of high mobility electrons at the interface of a Ga0.47In0.53AsInP heterojunction grown by MOCVD. The two dimensional electron concentrations and effective mass are determined by Shubnikov-de Haas studies, and compared with theoretical predictions. Evidence of an enhancement of the g-factor is observed. We also report observations of very pronounced quantum Hall steps as seen in GaAs-GaAlAs heterojunctions.",

author = "Nicholas, {R. J.} and Brummell, {M. A.} and Portal, {J. C.} and M. Razeghi and Poisson, {M. A.}",

note = "Funding Information: Acknowledgement - M.A.B. was supported by a S.E.R.C. CASE studentship in collaboration with the G.E.C. Hirst Research Centre. We wish to thank Dr. J.P. Duchemin of the Thomson-C.S.F. Laboratories for useful",

year = "1982",

month = sep,

doi = "10.1016/0038-1098(82)90848-1",

language = "English (US)",

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journal = "Solid State Communications",

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TY - JOUR

T1 - Quantum oscillations at a Ga0.47In0.53AsInP heterojunction interface

AU - Nicholas, R. J.

AU - Brummell, M. A.

AU - Portal, J. C.

AU - Razeghi, M.

AU - Poisson, M. A.

N1 - Funding Information: Acknowledgement - M.A.B. was supported by a S.E.R.C. CASE studentship in collaboration with the G.E.C. Hirst Research Centre. We wish to thank Dr. J.P. Duchemin of the Thomson-C.S.F. Laboratories for useful

PY - 1982/9

Y1 - 1982/9

N2 - We report the observation of a two dimensional gas of high mobility electrons at the interface of a Ga0.47In0.53AsInP heterojunction grown by MOCVD. The two dimensional electron concentrations and effective mass are determined by Shubnikov-de Haas studies, and compared with theoretical predictions. Evidence of an enhancement of the g-factor is observed. We also report observations of very pronounced quantum Hall steps as seen in GaAs-GaAlAs heterojunctions.

AB - We report the observation of a two dimensional gas of high mobility electrons at the interface of a Ga0.47In0.53AsInP heterojunction grown by MOCVD. The two dimensional electron concentrations and effective mass are determined by Shubnikov-de Haas studies, and compared with theoretical predictions. Evidence of an enhancement of the g-factor is observed. We also report observations of very pronounced quantum Hall steps as seen in GaAs-GaAlAs heterojunctions.

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JO - Solid State Communications

JF - Solid State Communications

IS - 11

ER -

Quantum oscillations at a Ga_0.47In_0.53AsInP heterojunction interface

Abstract

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