Quantum sensing using Type II InAs/GaSb superlattice for infrared detection

Manijeh Razeghi; Aaron Gin; Yajun Wei; Junjik Bae; Jongbum Nah

doi:10.1016/S0026-2692(03)00035-1

Quantum sensing using Type II InAs/GaSb superlattice for infrared detection

Manijeh Razeghi^*, Aaron Gin, Yajun Wei, Junjik Bae, Jongbum Nah

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Large, regular arrays of bulk GaSb and InAs/GaSb Type II superlattice pillars have been fabricated by electron beam lithography and dry etching. A 2.5 keV electron beam lithography system and metal evaporation are used to form the Au mask on superlattice and bulk substrates. Dry etching of these materials has been developed with BCl₃:Ar, CH₄:H₂:Ar and cyclic CH₄:H₂:Ar/O₂ plasmas. Etch temperatures were varied from 20 to 150 °C. The diameter of the superlattice pillars was below 50 nm with regular 200 nm spacing. Bulk GaSb pillars were etched with diameters below 20 nm. Areas of dense nanopillars as large as 500 μm × 500 μm were fabricated. The best height/diameter aspect ratio was approximately 10:1. To date, these are the smallest diameter III-V superlattice pillar structures reported, and the first nanopillars in the InAs/GaSb material system. The basic theory of these devices and surface passivation with SiO₂ and Si₃N₄ thin films has also been discussed.

Original language	English (US)
Pages (from-to)	405-410
Number of pages	6
Journal	Microelectronics Journal
Volume	34
Issue number	5-8
DOIs	https://doi.org/10.1016/S0026-2692(03)00035-1
State	Published - May 2003

Funding

One of the authors, A. Gin, is supported by a National Science Foundation Graduate Research Fellowship. The authors would also like to acknowledge the support of Yoon-Soo Park (ONR), Gail J. Brown (AFRL), Todd Steiner (AFOSR), Meimei Tidrow (MDA), Lynette Brown (AFRL) and Paul Levan (AFRL).

Keywords

Electron beam lithography
Nanopillars
Quantum sensing

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0026-2692(03)00035-1

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title = "Quantum sensing using Type II InAs/GaSb superlattice for infrared detection",

abstract = "Large, regular arrays of bulk GaSb and InAs/GaSb Type II superlattice pillars have been fabricated by electron beam lithography and dry etching. A 2.5 keV electron beam lithography system and metal evaporation are used to form the Au mask on superlattice and bulk substrates. Dry etching of these materials has been developed with BCl3:Ar, CH4:H2:Ar and cyclic CH4:H2:Ar/O2 plasmas. Etch temperatures were varied from 20 to 150 °C. The diameter of the superlattice pillars was below 50 nm with regular 200 nm spacing. Bulk GaSb pillars were etched with diameters below 20 nm. Areas of dense nanopillars as large as 500 μm × 500 μm were fabricated. The best height/diameter aspect ratio was approximately 10:1. To date, these are the smallest diameter III-V superlattice pillar structures reported, and the first nanopillars in the InAs/GaSb material system. The basic theory of these devices and surface passivation with SiO2 and Si3N4 thin films has also been discussed.",

keywords = "Electron beam lithography, Nanopillars, Quantum sensing",

author = "Manijeh Razeghi and Aaron Gin and Yajun Wei and Junjik Bae and Jongbum Nah",

note = "Funding Information: One of the authors, A. Gin, is supported by a National Science Foundation Graduate Research Fellowship. The authors would also like to acknowledge the support of Yoon-Soo Park (ONR), Gail J. Brown (AFRL), Todd Steiner (AFOSR), Meimei Tidrow (MDA), Lynette Brown (AFRL) and Paul Levan (AFRL).",

year = "2003",

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doi = "10.1016/S0026-2692(03)00035-1",

language = "English (US)",

volume = "34",

pages = "405--410",

journal = "Microelectronics Journal",

issn = "0026-2692",

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AU - Razeghi, Manijeh

AU - Gin, Aaron

AU - Wei, Yajun

AU - Bae, Junjik

AU - Nah, Jongbum

N1 - Funding Information: One of the authors, A. Gin, is supported by a National Science Foundation Graduate Research Fellowship. The authors would also like to acknowledge the support of Yoon-Soo Park (ONR), Gail J. Brown (AFRL), Todd Steiner (AFOSR), Meimei Tidrow (MDA), Lynette Brown (AFRL) and Paul Levan (AFRL).

PY - 2003/5

Y1 - 2003/5

N2 - Large, regular arrays of bulk GaSb and InAs/GaSb Type II superlattice pillars have been fabricated by electron beam lithography and dry etching. A 2.5 keV electron beam lithography system and metal evaporation are used to form the Au mask on superlattice and bulk substrates. Dry etching of these materials has been developed with BCl3:Ar, CH4:H2:Ar and cyclic CH4:H2:Ar/O2 plasmas. Etch temperatures were varied from 20 to 150 °C. The diameter of the superlattice pillars was below 50 nm with regular 200 nm spacing. Bulk GaSb pillars were etched with diameters below 20 nm. Areas of dense nanopillars as large as 500 μm × 500 μm were fabricated. The best height/diameter aspect ratio was approximately 10:1. To date, these are the smallest diameter III-V superlattice pillar structures reported, and the first nanopillars in the InAs/GaSb material system. The basic theory of these devices and surface passivation with SiO2 and Si3N4 thin films has also been discussed.

AB - Large, regular arrays of bulk GaSb and InAs/GaSb Type II superlattice pillars have been fabricated by electron beam lithography and dry etching. A 2.5 keV electron beam lithography system and metal evaporation are used to form the Au mask on superlattice and bulk substrates. Dry etching of these materials has been developed with BCl3:Ar, CH4:H2:Ar and cyclic CH4:H2:Ar/O2 plasmas. Etch temperatures were varied from 20 to 150 °C. The diameter of the superlattice pillars was below 50 nm with regular 200 nm spacing. Bulk GaSb pillars were etched with diameters below 20 nm. Areas of dense nanopillars as large as 500 μm × 500 μm were fabricated. The best height/diameter aspect ratio was approximately 10:1. To date, these are the smallest diameter III-V superlattice pillar structures reported, and the first nanopillars in the InAs/GaSb material system. The basic theory of these devices and surface passivation with SiO2 and Si3N4 thin films has also been discussed.

KW - Electron beam lithography

KW - Nanopillars

KW - Quantum sensing

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Quantum sensing using Type II InAs/GaSb superlattice for infrared detection

Abstract

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Keywords

ASJC Scopus subject areas

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