Quantum sensing using Type II InAs/GaSb superlattice for infrared detection

Manijeh Razeghi*, Aaron Gin, Yajun Wei, Junjik Bae, Jongbum Nah

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

Large, regular arrays of bulk GaSb and InAs/GaSb Type II superlattice pillars have been fabricated by electron beam lithography and dry etching. A 2.5 keV electron beam lithography system and metal evaporation are used to form the Au mask on superlattice and bulk substrates. Dry etching of these materials has been developed with BCl3:Ar, CH4:H2:Ar and cyclic CH4:H2:Ar/O2 plasmas. Etch temperatures were varied from 20 to 150 °C. The diameter of the superlattice pillars was below 50 nm with regular 200 nm spacing. Bulk GaSb pillars were etched with diameters below 20 nm. Areas of dense nanopillars as large as 500 μm × 500 μm were fabricated. The best height/diameter aspect ratio was approximately 10:1. To date, these are the smallest diameter III-V superlattice pillar structures reported, and the first nanopillars in the InAs/GaSb material system. The basic theory of these devices and surface passivation with SiO2 and Si3N4 thin films has also been discussed.

Original languageEnglish (US)
Pages (from-to)405-410
Number of pages6
JournalMicroelectronics Journal
Volume34
Issue number5-8
DOIs
StatePublished - May 1 2003

Keywords

  • Electron beam lithography
  • Nanopillars
  • Quantum sensing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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