Quantum Transport and Sub-Band Structure of Modulation-Doped GaAs/AlAs Core-Superlattice Nanowires

Dominik M. Irber, Jakob Seidl, Damon J. Carrad, Jonathan Becker, Nari Jeon, Bernhard Loitsch, Julia Winnerl, Sonja Matich, Markus Döblinger, Yang Tang, Stefanie Morkötter, Gerhard Abstreiter, Jonathan J. Finley, Matthew Grayson, Lincoln J. Lauhon, Gregor Koblmüller*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Modulation-doped III-V semiconductor nanowire (NW) heterostructures have recently emerged as promising candidates to host high-mobility electron channels for future high-frequency, low-energy transistor technologies. The one-dimensional geometry of NWs also makes them attractive for studying quantum confinement effects. Here, we report correlated investigations into the discrete electronic sub-band structure of confined electrons in the channel of Si Î-doped GaAs-GaAs/AlAs core-superlattice NW heterostructures and the associated signatures in lowerature transport. On the basis of accurate structural and dopant analysis using scanning transmission electron microscopy and atom probe tomography, we calculated the sub-band structure of electrons confined in the NW core and employ a labeling system inspired by atomic orbital notation. Electron transport measurements on top-gated NW transistors at cryogenic temperatures revealed signatures consistent with the depopulation of the quasi-one-dimensional sub-bands, as well as confinement in zero-dimensional-like states due to an impurity-defined background disorder potential. These findings are instructive toward reaching the ballistic transport regime in GaAs-AlGaAs based NW systems.

Original languageEnglish (US)
Pages (from-to)4886-4893
Number of pages8
JournalNano letters
Volume17
Issue number8
DOIs
StatePublished - Aug 9 2017

Keywords

  • Core-multishell heterostructure nanowires
  • low-dimensional electron transport
  • modulation doping
  • structural properties

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Mechanical Engineering
  • Bioengineering
  • General Materials Science

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