Quantum well infrared photodetector (λ = 3-20 μm) focal plane arrays: Monolithic integration with Si-based read-out integrated circuitry for low cost and high performance

M. Razeghi, M. Erdtmann, C. Jelen, J. Diaz, F. Guastavinos, G. J. Brown, Y. S. Park

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Results of detector characterization are presented for quantum well infrared photodetectors (QWIPs) fabricated from a variety of III-V material systems lattice-matched to InP substrate. Extremely large responsivities of 33.2 A/W were obtained from GaInAs/InP QWIPs operating at λ = 9 μm which represents to the authors' knowledge the largest value of responsivity for any QWIP in this wavelength range. Devices made from AlGaInAs/InP and GaInAs/AlInAs have also been realized that extend the wavelength range of sensitivity from 3 μm out to 20 μm while remaining lattice-matched to InP. Lattice-matched multispectral detectors are demonstrated for sensitivity at both 4 μm and 8.5 μm. Localized epitaxy of GaInAs/InP superlattice structures lattice-matched to InP was performed on Si substrate for the purpose of monolithic integration of III-V QWIPs with Si-based read-out integrated circuitry.

Original languageEnglish (US)
Pages (from-to)335-347
Number of pages13
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4130
DOIs
StatePublished - Jan 1 2000

Keywords

  • AlGaInAs
  • GaInAsP
  • InP
  • Monolithic integration
  • Quantum well infrared photodetector
  • Si

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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