Quantum well infrared photodetector (λ = 3-20 μm) focal plane arrays: Monolithic integration with Si-based read-out integrated circuitry for low cost and high performance

M. Razeghi; M. Erdtmann; C. Jelen; J. Diaz; F. Guastavinos; G. J. Brown; Y. S. Park

doi:10.1117/12.409875

Quantum well infrared photodetector (λ = 3-20 μm) focal plane arrays: Monolithic integration with Si-based read-out integrated circuitry for low cost and high performance

M. Razeghi, M. Erdtmann, C. Jelen, J. Diaz, F. Guastavinos, G. J. Brown, Y. S. Park

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Results of detector characterization are presented for quantum well infrared photodetectors (QWIPs) fabricated from a variety of III-V material systems lattice-matched to InP substrate. Extremely large responsivities of 33.2 A/W were obtained from GaInAs/InP QWIPs operating at λ = 9 μm which represents to the authors' knowledge the largest value of responsivity for any QWIP in this wavelength range. Devices made from AlGaInAs/InP and GaInAs/AlInAs have also been realized that extend the wavelength range of sensitivity from 3 μm out to 20 μm while remaining lattice-matched to InP. Lattice-matched multispectral detectors are demonstrated for sensitivity at both 4 μm and 8.5 μm. Localized epitaxy of GaInAs/InP superlattice structures lattice-matched to InP was performed on Si substrate for the purpose of monolithic integration of III-V QWIPs with Si-based read-out integrated circuitry.

Original language	English (US)
Pages (from-to)	335-347
Number of pages	13
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4130
DOIs	https://doi.org/10.1117/12.409875
State	Published - 2000

Keywords

AlGaInAs
GaInAsP
InP
Monolithic integration
Quantum well infrared photodetector
Si

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.409875

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Razeghi, M., Erdtmann, M., Jelen, C., Diaz, J., Guastavinos, F., Brown, G. J., & Park, Y. S. (2000). Quantum well infrared photodetector (λ = 3-20 μm) focal plane arrays: Monolithic integration with Si-based read-out integrated circuitry for low cost and high performance. Proceedings of SPIE - The International Society for Optical Engineering, 4130, 335-347. https://doi.org/10.1117/12.409875

@article{52eb905a90da40c59298fbd3bfec40db,

title = "Quantum well infrared photodetector (λ = 3-20 μm) focal plane arrays: Monolithic integration with Si-based read-out integrated circuitry for low cost and high performance",

abstract = "Results of detector characterization are presented for quantum well infrared photodetectors (QWIPs) fabricated from a variety of III-V material systems lattice-matched to InP substrate. Extremely large responsivities of 33.2 A/W were obtained from GaInAs/InP QWIPs operating at λ = 9 μm which represents to the authors' knowledge the largest value of responsivity for any QWIP in this wavelength range. Devices made from AlGaInAs/InP and GaInAs/AlInAs have also been realized that extend the wavelength range of sensitivity from 3 μm out to 20 μm while remaining lattice-matched to InP. Lattice-matched multispectral detectors are demonstrated for sensitivity at both 4 μm and 8.5 μm. Localized epitaxy of GaInAs/InP superlattice structures lattice-matched to InP was performed on Si substrate for the purpose of monolithic integration of III-V QWIPs with Si-based read-out integrated circuitry.",

keywords = "AlGaInAs, GaInAsP, InP, Monolithic integration, Quantum well infrared photodetector, Si",

author = "M. Razeghi and M. Erdtmann and C. Jelen and J. Diaz and F. Guastavinos and Brown, {G. J.} and Park, {Y. S.}",

year = "2000",

doi = "10.1117/12.409875",

language = "English (US)",

volume = "4130",

pages = "335--347",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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Razeghi, M, Erdtmann, M, Jelen, C, Diaz, J, Guastavinos, F, Brown, GJ & Park, YS 2000, 'Quantum well infrared photodetector (λ = 3-20 μm) focal plane arrays: Monolithic integration with Si-based read-out integrated circuitry for low cost and high performance', Proceedings of SPIE - The International Society for Optical Engineering, vol. 4130, pp. 335-347. https://doi.org/10.1117/12.409875

Quantum well infrared photodetector (λ = 3-20 μm) focal plane arrays: Monolithic integration with Si-based read-out integrated circuitry for low cost and high performance. / Razeghi, M.; Erdtmann, M.; Jelen, C. et al.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4130, 2000, p. 335-347.

Research output: Contribution to journal › Article › peer-review

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T1 - Quantum well infrared photodetector (λ = 3-20 μm) focal plane arrays

T2 - Monolithic integration with Si-based read-out integrated circuitry for low cost and high performance

AU - Razeghi, M.

AU - Erdtmann, M.

AU - Jelen, C.

AU - Diaz, J.

AU - Guastavinos, F.

AU - Brown, G. J.

AU - Park, Y. S.

PY - 2000

Y1 - 2000

N2 - Results of detector characterization are presented for quantum well infrared photodetectors (QWIPs) fabricated from a variety of III-V material systems lattice-matched to InP substrate. Extremely large responsivities of 33.2 A/W were obtained from GaInAs/InP QWIPs operating at λ = 9 μm which represents to the authors' knowledge the largest value of responsivity for any QWIP in this wavelength range. Devices made from AlGaInAs/InP and GaInAs/AlInAs have also been realized that extend the wavelength range of sensitivity from 3 μm out to 20 μm while remaining lattice-matched to InP. Lattice-matched multispectral detectors are demonstrated for sensitivity at both 4 μm and 8.5 μm. Localized epitaxy of GaInAs/InP superlattice structures lattice-matched to InP was performed on Si substrate for the purpose of monolithic integration of III-V QWIPs with Si-based read-out integrated circuitry.

AB - Results of detector characterization are presented for quantum well infrared photodetectors (QWIPs) fabricated from a variety of III-V material systems lattice-matched to InP substrate. Extremely large responsivities of 33.2 A/W were obtained from GaInAs/InP QWIPs operating at λ = 9 μm which represents to the authors' knowledge the largest value of responsivity for any QWIP in this wavelength range. Devices made from AlGaInAs/InP and GaInAs/AlInAs have also been realized that extend the wavelength range of sensitivity from 3 μm out to 20 μm while remaining lattice-matched to InP. Lattice-matched multispectral detectors are demonstrated for sensitivity at both 4 μm and 8.5 μm. Localized epitaxy of GaInAs/InP superlattice structures lattice-matched to InP was performed on Si substrate for the purpose of monolithic integration of III-V QWIPs with Si-based read-out integrated circuitry.

KW - AlGaInAs

KW - GaInAsP

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KW - Quantum well infrared photodetector

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JO - Proceedings of SPIE - The International Society for Optical Engineering

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ER -

Quantum well infrared photodetector (λ = 3-20 μm) focal plane arrays: Monolithic integration with Si-based read-out integrated circuitry for low cost and high performance

Abstract

Keywords

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